1.
IOJ-Iraqi Orthodontic Journal. 2005; 1 (1): 59-65
in English
| IMEMR
| ID: emr-70993
ABSTRACT
A low-energy Galium - Aluminum Arsenide [Ga-Al-As] semiconductor pulsed diode laser [P.W] of 904 nanometer wavelength, 1000 Hertz repetition rate, 6 watt peak power and 100 miliwatt average output power was manufactured to be used for orthodontic therapy purposes, of that stimulating the proliferation of bone cells [osteoblasts and osteoclasts] and periodontal ligament cells [fibroblasts] and consequently accelerating the orthodontic movement