Undoped amorphous silicon thermistor

The conductance of undoped a-Si thermistor is found to increase with temperature with an activation energy of 0.66 eV up to 500 degree K, beyond which the conductance increases at a slower rate. An explanation is given based on a structural deformation in the film. A multitrapping transport model is presented, from which the position of Fermi level is determined, more directly than reported earlier in the literature. Such a thermistor has a high dark-resistance, which minimizes power dissipation problems. This thermistor is particularly suitable for temperature dependent biomedical systems and measurements

Ectopic pregnency after lippes loop report of four cases

Four cases of tubal ectopic pregnancy is recorded. Review of literature and the mechanism is presented