Possibility of Benzene Exposure in Workers of a Semiconductor Industry Based on the Patent Resources, 1990–2010

Background@#This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. @*Methods@#A systematic patent search was conducted with the Google “Advanced Patent Search” engine using the keywords “semiconductor” and “benzene” combined with all of the words accessed on January 24, 2016. @*Results@#As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. @*Conclusion@#Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.

Possibility of Benzene Exposure in Workers of a Semiconductor Industry Based on the Patent Resources, 1990–2010

Background@#This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. @*Methods@#A systematic patent search was conducted with the Google “Advanced Patent Search” engine using the keywords “semiconductor” and “benzene” combined with all of the words accessed on January 24, 2016. @*Results@#As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. @*Conclusion@#Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.