ABSTRACT
Several combinations of measuring devices and phantoms were studied to measure electron beams. Silicon PN junction diode was used to find the dependence of depth dose profile on field size on axis of electron beam Depths of 50, 80 and 90% doses increased with the field size for small fields. For some larger fields, they were nearly constant. The smallest of field sizes over which the parameters were constant was enlarged with increase of the energy of electron beams. Depth dose distributions on axis of electron beam of 10 x 10 cm2 field were studied with several combinations of measuring devices and phantoms. Cylindrical ion chamber could not be used for measurement of surface dose, and was not convenient for measurement of near surface region of 6 MeV electron. With some exceptions, parameters agreed well with those studied by different devices and phantoms. Surface dose in some energies showed 4% difference between maximum and minimum. For 18 MeV, depths of 80 and 90% doses were considerably shallower by film than by others. Parallel-plate ion chamber with polystyrene phamtom and silicon PN junction would be recommended for measurement of central axis depth dose of electron beams with considerably large field size. It is desirable not to use cylindrical ion chamber for the purpose of measurement of surface dose or near surface region for lower energy electron beam. It is questionable that film would be recommended for measurement of dose distribution of electron with high energy like as 18 MeV.