Protective effect of galanin on DMNQ-induced oxidative stress and cell damage in HEK-293A cells / 中华行为医学与脑科学杂志
Chinese Journal of Behavioral Medicine and Brain Science
;
(12): 1057-1059, 2012.
Article
in Chinese
| WPRIM
| ID: wpr-432856
ABSTRACT
Objective To study the protective effect of galanin on 2,3-Dimethoxy-1,4-naphthoquinone (DMNQ)-induced oxidative stress and cell damage in HEK-293A cells and its possible mechanisms.Methods The expression of galanin and its three receptors (GalR1-3) in HEK-293A were determined with RTPCR technique.The cultured HEK-293A cells were divided into four groupsControl,DMNQ,DMNQ + GAL and DMNQ + AR-M1896 and the cell viability was measured with CellTiter 96 AQueous One Solution Cell Proliferation Assay (MTS).Results The RT-PCR data revealed the presence of galanin and its receptors in HEK-293A cells.The expression level was in the order of GalR2 =Galanin > GalR3 > GalR1.DMNQ caused oxidative stress and cell damage in HEK-293A cells with a dose-dependent manner with an IC50 =13.4 μM.Application of galanin reduced the DMNQ-induced cellular toxicity in HEK-293A,which increased cell viability by 24.4% and 18.8% in 1 μM and 100 nM,respectively.AR-M1896,an agonist of GalR2 had a similar effect,increased cell viability by 8.7% and 8.9% in 1 μM and 100 nM,respectively.Conclusion These data suggest that galanin has a protective effect on DMNQ-induced oxidative stress and cell damage in HEK-293A cells,probably mediated by GalR2.
Full text:
Available
Index:
WPRIM (Western Pacific)
Language:
Chinese
Journal:
Chinese Journal of Behavioral Medicine and Brain Science
Year:
2012
Type:
Article
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