The effect of semiconductor laser irradiation on root cannal seal / 实用口腔医学杂志

ABSTRACT

Objective:To evaluate the effect of semiconductor lasers irradiation after routine root canal preparation on root cannal seal.Methods:60 Single-rooted freshly extracted human teeth were randomly divided into 6 groups(n=10).The crowns were removed at the cementoenamel junction and the roots were endodontically prepared with conventional methods.The roots in groups A and B were irradiated with 1 W semiconductor laser for 20 s,in group C and D were ultrasonically washed for 1 min,in group E and F without any treatment were used as the controls.Then all the roots were filled by vertical condensation of warm gutta-percha.The root cannal seal was evaluated with microleakage measurement.The data was analyzed by ANOVA.The teeth of group B,D and F were sectioned and examined under scanning electron microscope(SEM).Results:The microleakage(mm) of group A,C and E was 1.70±0.82,2.02±0.40 and 4.56±2.72 respectively(A vs E,P0.05).SEM observation showed the melting,narrowness or closure of most dentinal tubules in group B,past and/or gutta-percha in the most dentinal tubules of group D.Conclusion:Semiconductor laser irradiation prior to root cannal filling can promote the effects of cannal seal.