Effect of Various Inodizing Characteristics on Bone Integration of Titanium Implant Surface Design

ABSTRACT

osseointegration of implant by using of resonance frequency analysis (RFA), quantitative and qualitative assessment of an anodically modified implant type with regard to osseous healing qualities. A total of 96 screw-shaped implants were prepared for this study. 72 implants were prepared by electrochemical oxidation with different ways. 24 (group 1 SP) were prepared at galvanostatic mode in 0.25 M sulfuric acid and phosphoric acid, 24 (group 2 GC) were prepared at galvanostatic mode in calcium glycerophosphate and calcium acetate and 24 (group 3 CMP (Calcium Metaphosphate) Coating were prepared at galvanostatic mode in 0.25M sulfuric acid and phosphoric acid followed by CMP coating. Rest of 24 (control group were as a control group of RBM surface. Bone tissue responses were evaluated by resonance frequency analysis (RFA) that were undertaken at 2, 4 and 6 weeks after implant placement in the mandible of mini-pig. Group 1 SP (anodized with sulfuric acid and phosphoric acid implants) demonstrated slightly stronger bone responses than control Group RBM. Group 2 GC (anodized surface with calcium glycerophosphate and calcium acetate implants) demonstrated no difference which were compared with control group. Group 3 GMP (anodized and CMP coated implants) demonstrated slightly stronger and faster bone responses than any other implants. But, all observation result of RFA showed no significant differences between experimental groups with various surface type. Histomorphometric evaluation demonstrated significantly higher bone-to-implant contact for group 2 GC. Significantly more bone formation was found inside threaded area for group 2 GC. It was concluded that group 2 GC (anodized surface with calcium glycerophosphate and calcium acetate implants) showed more effects on the bone tissue responses than RBM surface in initial period of implantation. In addition, CMP showed a tendency to promote bone tissue responses.