Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts / 浙江大学学报(英文版)(B辑:生物医学和生物技术)
Journal of Zhejiang University. Science. B
;
(12): 1135-1140, 2005.
Article
Dans Anglais
| WPRIM
| ID: wpr-263249
ABSTRACT
This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.
Texte intégral:
Disponible
Indice:
WPRIM (Pacifique occidental)
Sujet Principal:
Silicium
/
Propriétés de surface
/
Test de matériaux
/
Chimie
/
Porosité
/
Électrochimie
/
Électrodes
/
Champs électromagnétiques
/
Or
/
Méthodes
langue:
Anglais
Texte intégral:
Journal of Zhejiang University. Science. B
Année:
2005
Type:
Article
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