Undoped amorphous silicon thermistor

ABSTRACT

The conductance of undoped a-Si thermistor is found to increase with temperature with an activation energy of 0.66 eV up to 500 degree K, beyond which the conductance increases at a slower rate. An explanation is given based on a structural deformation in the film. A multitrapping transport model is presented, from which the position of Fermi level is determined, more directly than reported earlier in the literature. Such a thermistor has a high dark-resistance, which minimizes power dissipation problems. This thermistor is particularly suitable for temperature dependent biomedical systems and measurements