Semiconductor low level laser irradiation for exposure of hydroxyapatite orbital implants / 中华整形外科杂志
Chinese Journal of Plastic Surgery
;
(6): 177-179, 2004.
Artigo
em Chinês
| WPRIM
| ID: wpr-327282
ABSTRACT
<p><b>OBJECTIVE</b>To evaluate the efficacy of semiconductor low level laser irradiation for the treatment of postoperative exposure of hydroxyapatite orbital implants.</p><p><b>METHODS</b>22 cases with postoperative exposure of hydroxyapatite orbital implants were divided into three groups according to the size of implants exposure. The exposure wound in the 3 groups was irradated with semiconductor low level laser 5 min per day for 5-15 days. The follow-up period ranged from 2 to 24 months.</p><p><b>RESULTS</b>In the group with less then 3 mm of exposure, the wound healed in 1 week after 5-10 days irradiation; in the group with implant exposure of 4-7 mm, the would healed in 1-2 weeks after 10-15 days irradiation; in the group with implant exposure of 8-10 mm, the would healed in 2-3 weeks after 10-15 days irradiation. Compared with the treatments of drugs and/or surgical repair, which was used for another 20 cases of exposure of hydroxyapatite orbital implants, semiconductor low level laser increased healing rate obviously in the groups with implant exposure of 4-7 mm and 8-10 mm (P = 0.019, 0.018).</p><p><b>CONCLUSION</b>Semiconductor low level laser has better effects than drugs and/or surgical repair for exposure of hydroxyapatite orbital implants.</p>
Texto completo:
DisponíveL
Índice:
WPRIM (Pacífico Ocidental)
Assunto principal:
Patologia
/
Complicações Pós-Operatórias
/
Efeitos da Radiação
/
Radioterapia
/
Semicondutores
/
Seguimentos
/
Resultado do Tratamento
/
Durapatita
/
Implantes Orbitários
/
Terapia com Luz de Baixa Intensidade
Tipo de estudo:
Estudo observacional
/
Estudo prognóstico
Limite:
Adolescente
/
Adulto
/
Idoso
/
Criança
/
Feminino
/
Humanos
/
Masculino
Idioma:
Chinês
Revista:
Chinese Journal of Plastic Surgery
Ano de publicação:
2004
Tipo de documento:
Artigo
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