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Development of a F~--ion sensitive field transistor microelectrode and its preliminary application / 实用口腔医学杂志
Journal of Practical Stomatology ; (6)1995.
Artigo em Chinês | WPRIM | ID: wpr-670677
ABSTRACT

Objective:

To develop a new type of microelectrode used to measure free fluoride in minim solution.

Methods:

F--ion sensitive field transistor( F--ISFET) microelectrode was developed based on H+-ISFET combined with an Ag/AgCl referential electrode of microtube. The F--ISFET was used to determine the free fluoride ions in saliva and dental plaque fluid in microliter. And its property was investigated.

Results:

The test limit of F--ISFET was 10 -6 mol/L-10 -1mol/L, the linear test limit was 10 -6mol/L-10 -4mol/L, the sensitivity was 30-55 mV/pF, the responding time was less than 30 seconds, r2 was 0.97, the reclamation was 94%-104%.

Conclusion:

F--ISFET can be used to measure free fluoride ions in dental plaque.

Texto completo: DisponíveL Índice: WPRIM (Pacífico Ocidental) Tipo de estudo: Estudo diagnóstico Idioma: Chinês Revista: Journal of Practical Stomatology Ano de publicação: 1995 Tipo de documento: Artigo

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Texto completo: DisponíveL Índice: WPRIM (Pacífico Ocidental) Tipo de estudo: Estudo diagnóstico Idioma: Chinês Revista: Journal of Practical Stomatology Ano de publicação: 1995 Tipo de documento: Artigo