Development of a F~--ion sensitive field transistor microelectrode and its preliminary application / 实用口腔医学杂志
Journal of Practical Stomatology
;
(6)1995.
Artigo
em Chinês
| WPRIM
| ID: wpr-670677
ABSTRACT
Objective:
To develop a new type of microelectrode used to measure free fluoride in minim solution.Methods:
F--ion sensitive field transistor( F--ISFET) microelectrode was developed based on H+-ISFET combined with an Ag/AgCl referential electrode of microtube. The F--ISFET was used to determine the free fluoride ions in saliva and dental plaque fluid in microliter. And its property was investigated.Results:
The test limit of F--ISFET was 10 -6 mol/L-10 -1mol/L, the linear test limit was 10 -6mol/L-10 -4mol/L, the sensitivity was 30-55 mV/pF, the responding time was less than 30 seconds, r2 was 0.97, the reclamation was 94%-104%.Conclusion:
F--ISFET can be used to measure free fluoride ions in dental plaque.
Texto completo:
DisponíveL
Índice:
WPRIM (Pacífico Ocidental)
Tipo de estudo:
Estudo diagnóstico
Idioma:
Chinês
Revista:
Journal of Practical Stomatology
Ano de publicação:
1995
Tipo de documento:
Artigo
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