Effects of silicon addition on seed germination and seedling growth of Glvarrhiza uralensis under salt stress / 中草药

ABSTRACT

Objective: In this study, a water culture experiment was conducted to investigate the effects of silicon addition on the seed germination and seedling growth of Glvarrhiza uralensis under salt stress. Methods: Various components of the experiment were three salt treatments (50, 100, and 150 mmol/L NaCl) and six Si levels (0, 1, 2, 4, 6, and 8 mmol/L) in distilled water. Potassium silicate (K2SO4) was used as a source of Si. Results: The result showed that silicon addition had the significant effect on the seed germination and seedling growth, and this effect was dependent on the salt stress level and silicon addition concentration. Under 50 and 100 mmol/L NaCl stress condition, lower concentration silicon addition had no significant effect on the germination rate, germination index, seedling emergence rate, and radical length, while had the significantly promoted effect on plant height, and root and shoot dry weight of G. uralensis. However, higher concentration silicon addition had the significantly inhibited effect on the seed germination and seedling growth. Under 150 mmol/L NaCl stress condition, silicon addition at lower concentration significantly promoted the seed germination and seedling growth of G. uralensis, including the germination rate, seedling emergence, germination index, seedling vigor, radical and embryo length, and root and shoot dry weight. However, silicon addition at higher concentration significantly inhibited the seedling growth of G. uralensis, while had no significant effect on the seed germination. Conclusion: Silicon is directly involved in the physiological process of the seed germination and seedling growth of G. uralensis under salt stress condition, and this involved extent is dependent on the salt stress level and silicon addition concentration.