Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes.
Light Sci Appl
; 10: 129, 2021.
Article
in English
| MEDLINE | ID: covidwho-1275899
ABSTRACT
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.
Full text:
Available
Collection:
International databases
Database:
MEDLINE
Language:
English
Journal:
Light Sci Appl
Year:
2021
Document Type:
Article
Affiliation country:
S41377-021-00563-0
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