Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

ABSTRACT

TFET based label-free biosensors are fast, sensitive and more power efficient as compared to CMOS biosensors, which are prone to short channel effects (SCEs). However, literature is flooded with various TFET biosensors that have become the reason of dilemma for researchers during pandemic situations like COVID-19. Therefore, in this work, a physically doped (PD), charge plasma (CP) and electrically doped (ED) dielectric modulated (DM) TFET based label-free biosensors are compared, which cover almost the entire range of doping and junctionless devices. Also, we found that the ED based TFET biosensors provide better current sensitivities of 5.10 x 10(7), 4.77 x 10(8) and 7.11 x 10(8) for biomolecules with K=12, positive charge= 1 x 10(13) C/cm(2) and negative charge= -1 x 10(13) C/cm(2) respectively. Hence, ED-DM-TFET based biosensors can act as promising candidates to provide better detection and identification quality.