Thermal and Electrical Performance of Negative Capacitance FinFET on GaAs

ABSTRACT

Along with the COVID-19 pandemic and the large-scale application of 5G, IoT has become more critical for our daily lives. GaAs is a promising semiconductor for field effect transistors in IoT applications. Due to the high electron mobility of GaAs, n-type FinFET based on GaAs is expected with a higher conductance and electron velocity than Silicon. FinFET based on GaAs has a lower subthreshold swing (SS) and higher Ion/Ioff than FinFET based on Silicon, particularly at high temperatures.Negative Capacitance FinFET(NC-FinFET) is an important emerging technology for low-power applications. To further enhance the performance of the GaAs FinFET, we incorporate Hf0.5Zr0.5O2 films in the gate to achieve Negative Capacitance (NC). The NC effect brings a higher Ion/Ioff and a negative coefficient to reduce the SS of the FinFET. Our simulation research proves the GaAs-NC-FinFET has the slightest SS variation in 300K-400K and maximum Ion/Ioff compared with other FinFETs. © 2022 IEEE.