Breaking the transverse-magnetic polarized light emission bottleneck of AlGaN LED using nano-patterned substrates and Al reflector
2022 Photonics North, PN 2022
; 2022.
Article
in English
| Scopus | ID: covidwho-2120643
ABSTRACT
Ultraviolet light-emitting diodes based on Al-rich AlGaN semiconductors operating in the 210 nm-280 nm have drawn significant interest for many critical applications, including water purification, disinfection of air and surface as preventive measures of SARS COV-2, sterilization, etc. However, for the above-mentioned applications, the current technology still relies on toxic and inefficient mercury-based UV lamps. Driven by the immense need for an efficient, mercury-free, compact alternative technology, future water purification and disinfection technologies require the development of high-efficiency UV-C light-emitting diodes. To date, the external quantum efficiency (EQE) in AlGaN quantum well (QW) UV-LED heterostructures has been severely limited due to several factors including large densities of defects/dislocations, extremely low light extraction efficiency (LEE) of dominant transverse magnetic (TM) light, absorptive p -GaN contact, and total internal reflection (TIR). © 2022 IEEE.
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Scopus
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English
Journal:
2022 Photonics North, PN 2022
Year:
2022
Document Type:
Article
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