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Investigation on external quantum efficiency droops and inactivation efficiencies of AlGaN-based ultraviolet-c LEDs at 265-285 nm.
Guo, Ziquan; Li, Zhihui; Lai, Shouqiang; Hou, Xiaoyang; Fan, Xiaotong; Zhong, Chenming; Lin, Yue; Chen, Guolong; Qin, Guoheng; Gao, Tao; Fu, Nuoyi; Shi, Yuan; Liao, Xinqin; Lin, Yi; Lu, Yijun; Guo, Weijie; Chen, Zhong.
  • Guo Z; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Li Z; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Lai S; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Hou X; Xiamen Products Quality Supervision and Inspection Institute, Xiamen 361005, People's Republic of China.
  • Fan X; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Zhong C; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Lin Y; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Chen G; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Qin G; Kaistar lighting (Xiamen) Co., Ltd, Xiamen 361101, People's Republic of China.
  • Gao T; Xiamen Topstar Lighting Co., Ltd, Xiamen 361199, People's Republic of China.
  • Fu N; Xiamen Products Quality Supervision and Inspection Institute, Xiamen 361005, People's Republic of China.
  • Shi Y; Xiamen Products Quality Supervision and Inspection Institute, Xiamen 361005, People's Republic of China.
  • Liao X; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Lin Y; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Lu Y; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Guo W; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
  • Chen Z; Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
Nanotechnology ; 34(33)2023 Jun 01.
Article in English | MEDLINE | ID: covidwho-2323424
ABSTRACT
The temperature-dependent external quantum efficiency (EQE) droops of 265 nm, 275 nm, 280 nm, and 285 nm AlGaN-based ultraviolet-c light-emitting diodes (UVC-LEDs) differed in Al contents have been comprehensively investigated. The modifiedABCmodel (R = An+Bn2+Cn3) with the current-leakage related term,f(n)= Dn4, has been employed to analyze the recombination mechanisms in these UVC-LED samples. Experimental results reveal that, at relatively low electrical-current levels, the contribution of Shockley-Read-Hall (SRH) recombination exceeds those of the Auger recombination and carrier leakage. At relatively high electrical-current levels, the Auger recombination and carrier leakage jointly dominate the EQE droop phenomenon. Moreover, the inactivation efficiencies of 222 nm excimer lamp, 254 nm portable Mercury lamp, 265 nm, 280 nm, and 285 nm UVC-LED arrays in the inactivation ofEscherichia colihave been experimentally investigated, which could provide a technical reference for fighting against the new COVID-19.
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Full text: Available Collection: International databases Database: MEDLINE Language: English Year: 2023 Document Type: Article

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Full text: Available Collection: International databases Database: MEDLINE Language: English Year: 2023 Document Type: Article