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1.
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices.
J Nanosci Nanotechnol
; 13(5): 3293-7, 2013 May.
Artículo
en Inglés
| MEDLINE | ID: mdl-23858846
2.
Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.
J Nanosci Nanotechnol
; 13(9): 6212-5, 2013 Sep.
Artículo
en Inglés
| MEDLINE | ID: mdl-24205631
3.
Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.
Nanomaterials (Basel)
; 13(12)2023 Jun 17.
Artículo
en Inglés
| MEDLINE | ID: mdl-37368309
4.
Improved light extraction from large-area vertical light-emitting diodes with deep hole-patterns using nanosphere lithography.
J Nanosci Nanotechnol
; 11(12): 10339-43, 2011 Dec.
Artículo
en Inglés
| MEDLINE | ID: mdl-22408907
5.
Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.
J Nanosci Nanotechnol
; 10(7): 4701-5, 2010 Jul.
Artículo
en Inglés
| MEDLINE | ID: mdl-21128482
6.
Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes.
Nanoscale Res Lett
; 8(1): 507, 2013 Dec 02.
Artículo
en Inglés
| MEDLINE | ID: mdl-24295342
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