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1.
C-V-f, G-V-f and Zâ³-Z' Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition.
J Nanosci Nanotechnol
; 19(10): 6812-6820, 2019 Oct 01.
Artículo
en Inglés
| MEDLINE | ID: mdl-31027035
2.
Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering.
J Nanosci Nanotechnol
; 19(3): 1445-1450, 2019 Mar 01.
Artículo
en Inglés
| MEDLINE | ID: mdl-30469203
3.
Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering.
J Nanosci Nanotechnol
; 18(3): 1841-1846, 2018 Mar 01.
Artículo
en Inglés
| MEDLINE | ID: mdl-29448669
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