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1.
Time dependence of negative and positive photoconductivity for Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well under various temperatures and various incident photon energies and intensities.
Nanotechnology
; 32(14): 145708, 2021 Apr 02.
Artículo
en Inglés
| MEDLINE | ID: mdl-33326947
2.
Enhanced photoluminescence of InGaAs/AlGaAs quantum well with tungsten disulfide quantum dots.
Nanotechnology
; 31(22): 225703, 2020 May 29.
Artículo
en Inglés
| MEDLINE | ID: mdl-32050176
3.
Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis.
Sci Rep
; 10(1): 12503, 2020 Jul 27.
Artículo
en Inglés
| MEDLINE | ID: mdl-32719403
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