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1.
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.
Nanotechnology
; 26(33): 335601, 2015 Aug 21.
Artículo
en Inglés
| MEDLINE | ID: mdl-26222432
2.
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.
Sci Rep
; 9(1): 11709, 2019 Aug 12.
Artículo
en Inglés
| MEDLINE | ID: mdl-31406149
3.
Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes.
Nanoscale
; 10(10): 4686-4695, 2018 Mar 08.
Artículo
en Inglés
| MEDLINE | ID: mdl-29393959
4.
Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth.
Sci Rep
; 7(1): 9663, 2017 08 29.
Artículo
en Inglés
| MEDLINE | ID: mdl-28852044
5.
Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices.
Sci Rep
; 7(1): 9356, 2017 08 24.
Artículo
en Inglés
| MEDLINE | ID: mdl-28839283
6.
Real-time monitoring and visualization of the multi-dimensional motion of an anisotropic nanoparticle.
Sci Rep
; 7: 44167, 2017 03 08.
Artículo
en Inglés
| MEDLINE | ID: mdl-28272445
7.
Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.
Sci Rep
; 6: 34586, 2016 10 19.
Artículo
en Inglés
| MEDLINE | ID: mdl-27756916
8.
Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission.
Sci Rep
; 5: 17003, 2015 Nov 20.
Artículo
en Inglés
| MEDLINE | ID: mdl-26585509
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