ABSTRACT
The atomic layer deposition (ALD) of high-k dielectrics could build an efficient barrier against moisture and O2 adsorption. Such a barrier is highly needed for MoTe2 and WTe2 transition metal dichalcogenides because of the poor structural stability and the fast oxidization in ambient air. In situ x-ray photoelectron spectroscopy and ex situ atomic force microscopy and scanning transmission electron microscopy were employed to report a comparative study between the growth of Al2O3 on MoTe2 and WTe2 by means of traditional thermal ALD and plasma-enhanced ALD (PEALD). Similar to what has been observed on other 2D materials such as MoS2 and Graphene, the thermal ALD results in an islanding growth of Al2O3 on MoTe2 due to the dearth of dangling bonds, whereas, a uniform coverage of Al2O3 on WTe2 is observed and likely contributed to the high concentration of intrinsic structural defects. The PEALD behavior is consistent between MoTe2 and WTe2 providing a conformal and linear growth rate (â¼0.08 nm/cycle), which correlates with the creation of Te-O and metal-O nucleation sites. However, a thin layer of interfacial Mo or W oxides gradually forms, resulting from the plasma-induced damage in the topmost (1-2) layers. Attempts to enhance the Al2O3/MoTe2 interfacial quality by physically evaporating an Al2O3 seed layer are investigated as well. However, the evaporated Al2O3 process causes thermal damage on MoTe2, necessitating a more 'gentle' ALD technique for the surface passivation.
ABSTRACT
We have used the pseudo-tenfold surface of the orthorhombic Al(13)Co(4) crystal as a template for the adsorption of Cu thin films of various thicknesses deposited at different temperatures. This study has been carried out by means of low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), x-ray photoelectron spectroscopy (XPS) and x-ray photoelectron diffraction (XPD). From 300 to 573 K, Cu adatoms grow pseudomorphically up to one monolayer. At 300 K, the ß-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the ß-Al(Cu, Co) phase further transforms into the γ-Al(4)Cu(9) phase. Both ß and γ phases grow as two (110) domains rotated by 72° ± 1° from each other. Instead of following the substrate symmetry, it is the orientations of the bipentagonal motifs present on the clean Al(13)Co(4)(100) surface that dictate the growth orientation of these domains. The initial bulk composition and structural complexity of the substrate have a minor role in the formation of the γ-Al(4)Cu(9) phase as long as the amount of Al and the Cu film thickness reach a critical stoichiometry.
