ABSTRACT
Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
ABSTRACT
We report on an easy-to-use, successful, and reproducible route to synthesize functionalized graphite oxide (GO) and its conversion to graphene-like materials through chemical or thermal reduction of GO. Graphite oxide containing hydroxyl, epoxy, carbonyl, and carboxyl groups loses mainly hydroxyl and epoxy groups during reduction, whereas carboxyl species remain untouched. The interaction of functionalized graphene with fluorescent methylene blue (MB) is investigated and compared to graphite, fully oxidized GO, as well as thermally and chemically reduced GO. Optical absorption and emission spectra of the composites indicate a clear preference for MB interaction with the GO derivatives containing a large number of functional groups (GO and chemically reduced GO), whereas graphite and thermally reduced GO only incorporate a few MB molecules. These findings are consistent with thermogravimetric, X-ray photoelectron spectroscopic, and Raman data recorded at every stage of preparation. The optical data also indicate concentration-dependent aggregation of MB on the GO surface leading to stable MB dimers and trimers. The MB dimers are responsible for fluorescence quenching, which can be controlled by varying the pH value.
ABSTRACT
The electrodeposition of Ta from TaF(5) was studied in three different ionic liquids, namely in 1-butyl-1-methylpyrrolidinium bis(trifluoromethyl sulfonyl) amide, 1-ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl) amide and 1-methyl-3-propyl imidazolium bis(trifluoromethyl sulfonyl) amide. The electrochemical quartz crystal microbalance (EQCM) was used together with electrochemical techniques for characterizing in situ the electrodeposition process. With the help of the EQCM we could identify the stoichiometry of the electrodeposited species. Furthermore, square-wave voltammery was used to study intermediate reduction processes in the potential regime where no mass change was detected. An XPS analysis proved the existence of elemental Ta, besides some oxides and Ta halide species. Both the ionic liquid and the deposition conditions influence strongly the quality and properties of the deposited layers.
ABSTRACT
The aim of the work discussed in this paper was to characterize adsorbed self-assembled monolayers on different metal oxide substrates with angle-resolved XPS measurements. The substrates used were silicon wafers (100) coated with 300 nm Al, Ta, or Ti. They were coated with acids by immersing them in an ethanol solution. The orientation of long-chain organic acids adsorbed on metal oxides has been successfully identified by angle-resolved XPS. On Al, Ta, and Ti substrates, C(11) chains are orientated in the right manner, i.e. with the phosphonic group at the bottom and the thiophene group on top. The orientations of the C(2) and C(6) chains are not clear. The thickness of the layers could be obtained by using Tougaard nanostructure analysis, and it shows monolayers. A model of the chemical bonds between the phosphonic group and the metal could be developed from the chemical shift. For titanium, all three P-O bonds bind to the metal substrate, whereas only the P-O(H) bond binds to the metal on aluminium and tantalum.
