Ultracompact Single-Photon Sources of Linearly Polarized Vortex Beams.

Ultracompact chip-integrated single-photon sources of collimated beams with polarization-encoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization encoding functionalities remains so far elusive. Here, ultracompact single-photon sources of linearly polarized vortex beams based on chip-integrated quantum emitter-coupled metasurfaces are presented, which are meticulously designed by fully exploiting the potential of nanobrick-arrayed metasurfaces. The authors first demonstrate on-chip single-photon generation of high-purity linearly polarized vortex beams with prescribed topological charges of 0, - 1, and +1. The multiplexing of single-photon emission channels with orthogonal linear polarizations carrying different topological charges are further realized and their entanglement is demonstarated. The work illustrates the potential and feasibility of ultracompact quantum emitter-coupled metasurfaces as a new quantum optics platform for realizing chip-integrated high-dimensional single-photon sources.

Multiple channelling single-photon emission with scattering holography designed metasurfaces.

Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves. Using holographic metasurfaces fabricated around nanodiamonds with single Ge vacancy centres, we experimentally demonstrate on-chip integrated efficient generation of two well-collimated single-photon beams propagating along different 15° off-normal directions with orthogonal linear polarizations.

Femtosecond Er-Doped All-Fiber Laser with High-Density Well-Aligned Carbon-Nanotube-Based Thin-Film Saturable Absorber.

We have studied the ultrafast saturation behavior of a high-density well-aligned single-walled carbon nanotubes saturable absorber (HDWA-SWCNT SA), obtained by a high-pressure and high-temperature treatment of commercially available single-wall carbon nanotubes (SWCNTs) and related it to femtosecond erbium-doped fiber laser performance. We have observed the polarization dependence of a nonlinear optical saturation, along with a low saturation energy level of <1 fJ, limited to the detector threshold used, and the ultrafast response time of <250 fs, while the modulation depth was approximately 12%. We have obtained the generation of ultrashort stretched pulses with a low mode-locking launching threshold of ~100 mW and an average output power of 12.5 mW in an erbium-doped ring laser with the hybrid mode-locking of a VDVA-SWNT SA in combination with the effects of nonlinear polarization evolution. Dechirped pulses with a duration of 180 fs were generated, with a repetition rate of about 42.22 MHz. The average output power standard deviation was about 0.06% RMS during 3 h of measurement.

Silicon-Vacancy Nanodiamonds as High Performance Near-Infrared Emitters for Live-Cell Dual-Color Imaging and Thermometry.

Nanodiamonds (NDs) with color centers are excellent emitters for various bioimaging and quantum biosensing applications. In our work, we explore new applications of NDs with silicon-vacancy centers (SiV) obtained by high-pressure high-temperature (HPHT) synthesis based on metal-catalyst-free growth. They are coated with a polypeptide biopolymer, which is essential for efficient cellular uptake. The unique optical properties of NDs with SiV are their high photostability and narrow emission in the near-infrared region. Our results demonstrate for the first time that NDs with SiV allow live-cell dual-color imaging and intracellular tracking. Also, intracellular thermometry and challenges associated with SiV atomic defects in NDs are investigated and discussed for the first time. NDs with SiV nanoemitters provide new avenues for live-cell bioimaging, diagnostic (SiV as a nanosized thermometer), and theranostic (nanodiamonds as drug carrier) applications.

Fluorescence enhancement of a single germanium vacancy center in a nanodiamond by a plasmonic Bragg cavity.

Germanium vacancy (GeV) centers in diamonds constitute a promising platform for single-photon sources to be used in quantum information technologies. Emission from these color centers can be enhanced by utilizing a cavity that is resonant at the peak emission wavelength. We investigate circular plasmonic Bragg cavities for enhancing the emission from single GeV centers in nanodiamonds (NDs) at the zero phonon line. Following simulations of the enhancement for different configuration parameters, the appropriately designed Bragg cavities together with out-coupling gratings composed of hydrogen silsesquioxane ridges are fabricated around the NDs containing nitrogen vacancy centers deposited on a silica-coated silver surface. We characterize the fabricated configurations and finely tune the cavity parameters to match the GeV emission. Finally, we fabricate the cavity containing a single GeV-ND and compare the total decay-rate before and after cavity fabrication, finding a decay-rate enhancement of ∼5.5 and thereby experimentally confirming the feasibility of emission enhancement with circular plasmonic cavities.

Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV- photoluminescence band.

We have produced two types of synthetic nanodiamonds Si- and Si,P-doped and have characterized the thermal susceptibilities of the spectral band of silicon-vacancy (SiV-) centers at approximately 740 nm in each case. The covered temperature range from 295 to 350 K is of interest for thermometry in biological systems. Comparison of the relative brightness of the Si- and Si,P-doped crystals shows that phosphorous significantly increases average concentration and homogeneity of distribution of SiV- centers in nanodiamonds. Moreover, linear dependence on temperature of the zero-phonon line width in Si-doped crystals is 0.061(2) nm K-1 but is 0.047(3) nm K-1, about 35% smaller in Si,P-doped nanodiamonds. This proves control of SiV- properties with additional chemical doping and close proximity of Si and P atoms.

On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides.

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) were fabricated on single crystalline silver plates to contain those of deposited nanodiamonds that are found to feature appropriate single GeV centres. The low-loss plasmonic configuration enabled the 532-nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV centre was incorporated. The remote GeV emitter was thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~six-fold Purcell enhancement, ~56% coupling efficiency and ~33 µm transmission length, thereby opening new avenues for the implementation of nanoscale functional quantum devices.

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres.

Nanodidamonds containing colour centres open up many applications in quantum information processing, metrology, and quantum sensing. However, controlling the synthesis of nanodiamonds containing silicon vacancy (SiV) centres is still not well understood. Here we study nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centres. Our results show that nanodiamond growth can be controlled and optimised for different applications.