Water Adsorption Isotherm and Surface Conductivity of Boroaluminosilicate Glasses.

The surface resistivity of boroaluminosilicate display glasses, which may affect the downstream display panel manufacturing, varies with the relative humidity (RH) of the environment, but the origin of this RH dependence has not been well understood. We have measured the water adsorption behavior on Corning Eagle XG (Glass-E) and Lotus NXT (Glass-L) glass panels using Brewster angle transmission infrared spectroscopy. The IR spectra of adsorbed water were analyzed to obtain the effective thickness of adsorbed water, the distribution of hydrogen-bonding interactions among the adsorbed water molecules, and the isosteric heat of water adsorption. These characteristics were compared with the electrical conductivity (inverse of resistivity) of these two glasses [Appl. Surf. Sci. 2015, 356, 1189]. This comparison revealed the correlation between the conductivity and the water layer structure, which could explain the surface resistivity difference between Glass-E and Glass-L as a function of RH. This study also disputed the previous hypothesis that the water adsorption isotherm would be governed by the areal density of the surface hydroxyl group; instead, it suggested that the network modifier ions may also play a critical role, especially in the intermediate RH regime.

Prediction of glassy silica etching with hydrogen fluoride gas by kinetic Monte Carlo simulations.

Understanding the surface properties of glass during the hydrogen fluoride (HF)-based vapor etching process is essential to optimize treatment processes in semiconductor and glass industries. In this work, we investigate an etching process of fused glassy silica by HF gas with kinetic Monte Carlo (KMC) simulations. Detailed pathways of surface reactions between gas molecules and the silica surface with activation energy sets are explicitly implemented in the KMC algorithm for both dry and humid conditions. The KMC model successfully describes the etching of the silica surface with the evolution of surface morphology up to the micron regime. The simulation results show that the calculated etch rate and surface roughness are in good agreement with the experimental results, and the effect of humidity on the etch rate is also confirmed. Development of roughness is theoretically analyzed in terms of surface roughening phenomena, and it is predicted that the values of growth and roughening exponents are 0.19 and 0.33, respectively, suggesting that our model belongs to the Kardar-Parisi-Zhang universality class. Furthermore, the temporal evolution of surface chemistry, specifically surface hydroxyls and fluorine groups, is monitored. The surface density of fluorine moieties is 2.5 times higher than that of the hydroxyl groups, implying that the surface is well fluorinated during vapor etching.

Passivation of Mid-Gap Electronic States at Calcium Aluminosilicate Glass Surfaces upon Water Exposure: An Ab Initio Study.

When a clean glass surface is exposed to humid air, a thin water layer forms on the hydrophilic surface. Using ab initio molecular dynamics, we simulate the changes in the electronic structure of a CaO-Al2O3-SiO2 glass model upon vacuum fracture and subsequent exposure to H2O. When the glass is fractured, dangling bonds form, which lower the band gap of the surface by ∼1.8 eV compared to the bulk value due to mid-gap surface states. When H2O adsorbs onto the vacuum-fractured surface, the band gap increases to a value closer to that of the bulk band gap. Using two different hydroxylation methods, we find that the calculated band gap of the glass surface depends on the hydroxylation state. Surfaces with ∼4.5 OH/nm2 have smaller band gaps due to unfilled surface states, and surfaces with ∼2.5 OH/nm2 have larger band gaps with no apparent unfilled surface states. The resulting changes in the electronic structure, quantified by electron affinity and work function values, are hypothesized to play an important role in the electrostatic charge transfer based on the principles of surface state theory, which posit that the density of electronic surface states determines the amount of electronic charge transfer to or from material surfaces.