Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films.

Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100% switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr, Ti)O3thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

Understanding nanoscale structural distortions in Pb(Zr0.2Ti0.8)O3 by utilizing X-ray nanodiffraction and clustering algorithm analysis.

Hard X-ray nanodiffraction provides a unique nondestructive technique to quantify local strain and structural inhomogeneities at nanometer length scales. However, sample mosaicity and phase separation can result in a complex diffraction pattern that can make it challenging to quantify nanoscale structural distortions. In this work, a k-means clustering algorithm was utilized to identify local maxima of intensity by partitioning diffraction data in a three-dimensional feature space of detector coordinates and intensity. This technique has been applied to X-ray nanodiffraction measurements of a patterned ferroelectric PbZr0.2Ti0.8O3 sample. The analysis reveals the presence of two phases in the sample with different lattice parameters. A highly heterogeneous distribution of lattice parameters with a variation of 0.02 Šwas also observed within one ferroelectric domain. This approach provides a nanoscale survey of subtle structural distortions as well as phase separation in ferroelectric domains in a patterned sample.

Highly Anisotropic Magnetic Domain Wall Behavior in In-Plane Magnetic Films.

We have studied the nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisotropy. In contrast to observed behavior in films with out-of-plane anisotropy, the nucleated domains have a rectangular shape in which a pair of the opposite sides are perfectly linear DWs, while the other pair present zigzags. The field induced propagation of these two DW types are found to be different. The linear ones follow a creep law identical to what is usually observed in out-of-plane films, while the velocity of zigzag DWs depends linearly on the applied field amplitude down to very low field. This unexpected feature can be explained by the shape of the DW, and these results provide first experimental evidence of the applicability of the 1D model in two-dimensional ferromagnetic thin films.

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films.

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed. We report the epitaxial growth of Hf0.5Zr0.5O2 thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 substrates. The films, which are under epitaxial compressive strain and predominantly (111)-oriented, display large ferroelectric polarization values up to 34 µC cm-2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This finding, in conjunction with density functional theory calculations, allows us to propose a compelling model for the formation of the ferroelectric phase. In addition, these results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries.

Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two-terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Lix CoO2 layer. These observations are very well correlated with the observed insulator-to-metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling - much further than the present cycling life of usual lithium-ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy.

Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.

Universal Fabrication of 2D Electron Systems in Functional Oxides.

2D electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO3 -based heterostructures, are hampered by the need for growing complex oxide overlayers thicker than 2 nm using evolved techniques. It is demonstrated that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides.

Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.

The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.

Two-chamber AFM: probing membrane proteins separating two aqueous compartments.

Biological membranes compartmentalize and define physical borders of cells. They are crowded with membrane proteins that fulfill diverse crucial functions. About one-third of all genes in organisms code for, and the majority of drugs target, membrane proteins. To combine structure and function analysis of membrane proteins, we designed a two-chamber atomic force microscopy (AFM) setup that allows investigation of membranes spanned over nanowells, therefore separating two aqueous chambers. We imaged nonsupported surface layers (S layers) of Corynebacterium glutamicum at sufficient resolution to delineate a 15 A-wide protein pore. We probed the elastic and yield moduli of nonsupported membranes, giving access to the lateral interaction energy between proteins. We combined AFM and fluorescence microscopy to demonstrate the functionality of proteins in the setup by documenting proton pumping by Halobacterium salinarium purple membranes.