Superconducting Nd1-xEuxNiO2 thin films using in situ synthesis.

We report on superconductivity in Nd1-xEuxNiO2 using Eu as a 4f dopant of the parent NdNiO2 infinite-layer compound. We use an all-in situ molecular beam epitaxy reduction process to achieve the superconducting phase, providing an alternate method to the ex situ CaH2 reduction process to induce superconductivity in the infinite-layer nickelates. The Nd1-xEuxNiO2 samples exhibit a step-terrace structure on their surfaces, have a Tc onset of 21 K at x = 0.25, and have a large upper critical field that may be related to Eu 4f doping.

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates.

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

High-order replica bands in monolayer FeSe/SrTiO3 revealed by polarization-dependent photoemission spectroscopy.

The mechanism of the enhanced superconductivity in monolayer FeSe/SrTiO3 has been enthusiastically studied and debated over the past decade. One specific observation has been taken to be of central importance: the replica bands in the photoemission spectrum. Although suggestive of electron-phonon interaction in the material, the essence of these spectroscopic features remains highly controversial. In this work, we conduct angle-resolved photoemission spectroscopy measurements on monolayer FeSe/SrTiO3 using linearly polarized photons. This configuration enables unambiguous characterization of the valence electronic structure with a suppression of the spectral background. We consistently observe high-order replica bands derived from various Fe 3d bands, similar to those observed on bare SrTiO3. The intensity of the replica bands is unexpectedly high and different between dxy and dyz bands. Our results provide new insights on the electronic structure of this high-temperature superconductor and the physical origin of the photoemission replica bands.

Designing and controlling the properties of transition metal oxide quantum materials.

This Perspective addresses the design, creation, characterization and control of synthetic quantum materials with strong electronic correlations. We show how emerging synergies between theoretical/computational approaches and materials design/experimental probes are driving recent advances in the discovery, understanding and control of new electronic behaviour in materials systems with interesting and potentially technologically important properties. The focus here is on transition metal oxides, where electronic correlations lead to a myriad of functional properties including superconductivity, magnetism, Mott transitions, multiferroicity and emergent behaviour at picoscale-designed interfaces. Current opportunities and challenges are also addressed, including possible new discoveries of non-equilibrium phenomena and optical control of correlated quantum phases of transition metal oxides.

Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal.

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+ We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti-Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

Tuning spin excitations in magnetic films by confinement.

Spin excitations of magnetic thin films are the founding element for magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, the behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ resonant inelastic X-ray scattering to investigate the spectrum of spin excitations in mesoscopic Fe films, from bulk-like films down to three unit cells. In bulk samples, we find isotropic, dispersive ferromagnons consistent with previous neutron scattering results for bulk single crystals. As the thickness is reduced, these ferromagnetic spin excitations renormalize to lower energies along the out-of-plane direction while retaining their dispersion in the in-plane direction. This thickness dependence is captured by simple Heisenberg model calculations accounting for the confinement in the out-of-plane direction through the loss of Fe bonds. Our findings highlight the effects of mesoscopic scaling on spin dynamics and identify thickness as a knob for fine tuning and controlling magnetic properties.

Stabilization of Competing Ferroelectric Phases of HfO_{2} under Epitaxial Strain.

Hafnia (HfO_{2})-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. Identifying and stabilizing the ferroelectric phases of HfO_{2} have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO_{2} are used to discover that imposing an in-plane shear strain on the metastable tetragonal phase drives it to a polar phase. This in-plane-shear-induced polar phase is shown to be an epitaxial-strain-induced distortion of a previously proposed metastable ferroelectric Pnm2_{1} phase of HfO_{2}. This ferroelectric Pnm2_{1} phase can account for the recently observed ferroelectricity in (111)-oriented HfO_{2}-based thin films on a SrTiO_{3} (STO) (001) substrate [Nat. Mater. 17, 1095 (2018)NMAACR1476-112210.1038/s41563-018-0196-0]. Further investigation of this alternative ferroelectric phase of HfO_{2} could potentially improve the performances of HfO_{2}-based films in logic and memory devices.

Strong Orbital Polarization in a Cobaltate-Titanate Oxide Heterostructure.

Through a combination of experimental measurements and theoretical modeling, we describe a strongly orbital-polarized insulating ground state in an (LaTiO_{3})_{2}/(LaCoO_{3})_{2} oxide heterostructure. X-ray absorption spectra and ab initio calculations show that an electron is transferred from the titanate to the cobaltate layers. The charge transfer, accompanied by a large octahedral distortion, induces a substantial orbital polarization in the cobaltate layer of a size unattainable via epitaxial strain alone. The asymmetry between in-plane and out-of-plane orbital occupancies in the high-spin cobaltate layer is predicted by theory and observed through x-ray linear dichroism experiments. Manipulating orbital configurations using interfacial coupling within heterostructures promises exciting ground-state engineering for realizing new emergent electronic phases in metal oxide superlattices.

Integration of sputter-deposited multiferroic CoFe2O4-BiFeO3 nanocomposites on conductive La0.7Sr0.3MnO3 electrodes.

The structure, magnetic and ferroelectric properties of sputtered epitaxial CoFe2O4-BiFeO3 (CFO-BFO) nanocomposite thin films grown on La0.7Sr0.3MnO3 (LSMO) layers on (001) oriented SrTiO3 (STO) substrates and on STO-buffered Si are described. The as-grown LSMO thin films were smooth and poorly conductive but the resistivity was reduced and the surfaces roughened after annealing. Cosputtered CFO and BFO on STO formed vertically aligned nanostructures consisting of epitaxial spinel CFO pillars within a perovskite BFO matrix, but the rough surface of the annealed LSMO film promoted additional CFO pillar orientations. A reorientation of the CFO magnetic easy axis to an in-plane direction occurred as the LSMO became thicker due to changes in the strain state of the CFO pillars. The LSMO underlayer enabled the ferroelectric response of the BFO to be measured. Nanocomposites were grown onto LSMO/SrTiO3/Si which provides a path towards large scale integration of electrically contacted nanocomposites on Si.

Real-Time Gas Mixture Analysis Using Mid-Infrared Membrane Microcavities.

Real-time gas analysis on-a-chip was demonstrated using a mid-infrared (mid-IR) microcavity. Optical apertures for the microcavity were made of ultrathin silicate membranes embedded in a silicon chip using the complementary metal-oxide-semiconductor (CMOS) process. Fourier transform infrared spectroscopy (FTIR) shows that the silicate membrane is transparent in the range of 2.5-6.0 µm, a region that overlaps with multiple characteristic gas absorption lines and therefore enables gas detection applications. A test station integrating a mid-IR tunable laser, a microgas delivery system, and a mid-IR camera was assembled to evaluate the gas detection performance. CH4, CO2, and N2O were selected as analytes due to their strong absorption bands at λ = 3.25-3.50, 4.20-4.35, and 4.40-4.65 µm, which correspond to C-H, C-O, and O-N stretching, respectively. A short subsecond response time and high gas identification accuracy were achieved. Therefore, our chip-scale mid-IR sensor provides a new platform for an in situ, remote, and embedded gas monitoring system.

Single Atomic Layer Ferroelectric on Silicon.

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5-10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811).

Controlling Mobility in Perovskite Oxides by Ferroelectric Modulation of Atomic-Scale Interface Structure.

Coherent and epitaxial interfaces permit the realization of electric field driven devices controlled by atomic-scale structural and electronic effects at interfaces. Compared to conventional field effect devices where channel conductivity is modulated by carrier density modification, the propagation of atomic-scale distortions across an interface can control the atomic scale bonding, interatomic electron tunneling rates and thus the mobility of the channel material. We use first-principles theory to design an atomically abrupt epitaxial perovskite heterostructure involving an oxide ferroelectric (PbZr0.2Ti0.8O3) and conducting oxide channel (LaNiO3) where coupling of polar atomic motions to structural distortions can induce large, reversible changes in the channel mobility. We fabricate and characterize the heterostructure and measure record values, larger than 1000%, for the conductivity modulation. Our results describe how purely interfacial effects can be engineered to deliver unique electronic device properties and large responses to external fields.

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes.

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes.

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

Correction: A narrow amide I vibrational band observed by sum frequency generation spectroscopy reveals highly ordered structures of a biofilm protein at the air/water interface.

Correction for 'A narrow amide I vibrational band observed by sum frequency generation spectroscopy reveals highly ordered structures of a biofilm protein at the air/water interface' by Zhuguang Wang et al., Chem. Commun., 2016, 52, 2956-2959.

A narrow amide I vibrational band observed by sum frequency generation spectroscopy reveals highly ordered structures of a biofilm protein at the air/water interface.

We characterized BslA, a bacterial biofilm protein, at the air/water interface using vibrational sum frequency generation spectroscopy and observed one of the sharpest amide I bands ever reported. Combining methods of surface pressure measurements, thin film X-ray reflectivity, and atomic force microscopy, we showed extremely ordered BslA at the interface.

Orbital engineering in symmetry-breaking polar heterostructures.

We experimentally demonstrate a novel approach to substantially modify orbital occupations and symmetries in electronically correlated oxides. In contrast to methods using strain or confinement, this orbital tuning is achieved by exploiting charge transfer and inversion symmetry breaking using atomically layered heterostructures. We illustrate the technique in the LaTiO_{3}-LaNiO_{3}-LaAlO_{3} system; a combination of x-ray absorption spectroscopy and ab initio theory reveals electron transfer and concomitant polar fields, resulting in a ∼50% change in the occupation of Ni d orbitals. This change is sufficiently large to remove the orbital degeneracy of bulk LaNiO_{3} and creates an electronic configuration approaching a single-band Fermi surface. Furthermore, we theoretically show that such three-component heterostructuring is robust and tunable by choice of insulator in the heterostructure, providing a general method for engineering orbital configurations and designing novel electronic systems.

Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganites.

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

Interface-induced nonswitchable domains in ferroelectric thin films.

Engineering domains in ferroelectric thin films is crucial for realizing technological applications including non-volatile data storage and solar energy harvesting. Size and shape of domains strongly depend on the electrical and mechanical boundary conditions. Here we report the origin of nonswitchable polarization under external bias that leads to energetically unfavourable head-to-head domain walls in as-grown epitaxial PbZr(0.2)Ti(0.8)O3 thin films. By mapping electrostatic potentials and electric fields using off-axis electron holography and electron-beam-induced current with in situ electrical biasing in a transmission electron microscope, we show that electronic band bending across film/substrate interfaces locks local polarization direction and further produces unidirectional biasing fields, inducing nonswitchable domains near the interface. Presence of oxygen vacancies near the film surface, as revealed by electron-energy loss spectroscopy, stabilizes the charged domain walls. The formation of charged domain walls and nonswitchable domains reported in this study can be an origin for imprint and retention loss in ferroelectric thin films.

Synthesis of SnTe nanoplates with {100} and {111} surfaces.

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown [Saghir et al. Cryst. Growth Des. 2014, 14, 2009-2013; Safdar et al. Cryst. Growth Des. 2014, 14, 2502-2509; Safdar et al. Nano Lett. 2013, 13, 5344-5349; Li et al. Nano Lett. 2013, 13, 5443-5448]. In this report, we demonstrate the synthesis of SnTe nanoplates with lateral dimensions spanning tens of micrometers and thicknesses of a few hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows a high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high-temperature rock salt to a low-temperature rhombohedral structure. For nanoplates with a very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions.