ABSTRACT
BACKGROUND: Deoxyribonucleic acid (DNA) is one of the best candidate materials for various device applications such as in electrodes for rechargeable batteries, biosensors, molecular electronics, medical- and biomedical-applications etc. Hence, it is worthwhile to examine the mechanism of charge transport in the DNA molecule, however, still a question without a clear answer is DNA a molecular conducting material (wire), semiconductor, or insulator? The answer, after the published data, is still ambiguous without any confirmed and clear scientific answer. DNA is found to be always surrounded with different electric charges, ions, and dipoles. These surrounding charges and electric barrier(s) due to metallic electrodes (as environmental factors (EFs)) play a substantial role when measuring the electrical conductivity through λ-double helix (DNA) molecule suspended between metallic electrodes. We found that strong frequency dependence of AC-complex conductivity comes from the electrical conduction of EFs. This leads to superimposing serious incorrect experimental data to measured ones. METHODS: At 1 MHz, we carried out a first control experiment on electrical conductivity with and without the presence of DNA molecule. If there are possible electrical conduction due to stray ions and contribution of substrate, we will detected them. This control experiment revealed that there is an important role played by the environmental-charges around DNA molecule and any experiment should consider this role. RESULTS AND DISCUSSION: We have succeeded to measure both electrical conductivity due to EFs (σ ENV) and electrical conductivity due to DNA molecule (σ DNA) independently by carrying the measurements at different DNA-lengths and subtracting the data. We carried out measurements as a function of frequency (f) and temperature (T) in the ranges 0.1 Hz < f < 1 MHz and 288 K < T < 343 K. The measured conductivity (σ MES) portrays a metal-like behavior at high frequencies near 1 MHz. However, we found that σ DNA was far from this behavior because the conduction due to EFs superimposes σ DNA, in particular at low frequencies. By measuring the electrical conductivity at different lengths: 40, 60, 80, and 100 nm, we have succeeded not only to separate the electrical conduction of the DNA molecule from all EFs effects that surround the molecule, but also to present accurate values of σ DNA and the dielectric constant of the molecule ε'DNA as a function of temperature and frequency. Furthermore, in order to explain these data, we present a model describing the electrical conduction through DNA molecule: DNA is a classical semiconductor with charges, dipoles and ions that result in creation of localized energy-states (LESs) in the extended bands and in the energy gap of the DNA molecule. CONCLUSIONS: This model explains clearly the mechanism of charge transfer mechanism in the DNA, and it sheds light on why the charge transfer through the DNA can lead to insulating, semiconducting, or metallic behavior on the same time. The model considers charges on DNA, in the extended bands, either could be free to move under electric field or localized in potential wells/hills. Localization of charges in DNA is an intrinsic structural-property of this solitaire molecule. At all temperatures, the expected increase in thermal-induced charge is attributed to the delocalization of holes (or/and electrons) in potential hills (or/and potential wells) which accurately accounts for the total electric and dielectric behavior through DNA molecule. We succeeded to fit the experimental data to the proposed model with reasonable magnitudes of potential hills/wells that are in the energy range from 0.068 eV.
ABSTRACT
Thermal stability and crystallization of three multicomponent glassy alloys, Al86Y7Ni5Co1Fe0.5Pd0.5, Al85Y8Ni5Co1Fe0.5Pd0.5 and Al84Y9Ni4Co1.5Fe0.5Pd1, were examined to assess the ability to form the mixture of amorphous (am) and fcc-aluminum (α-Al) phases. On heating, the glass transition into the supercooled liquid is shown by the 85Al and 84Al glasses. The crystallization sequences are [am] â [am + α-Al] â [α-Al + compounds] for the 86Al and 85Al alloys, and [am] â [am + α-Al + cubic AlxMy (M = Y, Ni, Co, Fe, Pd)] â [am + α-Al] â [α-Al + Al3Y + Al9(Co, Ni)2 + unknown phase] for the 84Al alloy. The glass transition appears even for the 85Al alloy where the primary phase is α-Al. The heating-induced reversion from [am + α-Al + multicomponent AlxMy] to [am + α-Al] for the 84Al alloy is abnormal, not previously observed in crystallization of glassy alloys, and seems to originate from instability of the metastable AlxMy compound, in which significant inhomogeneous strain is caused by the mixture of solute elements. This novel reversion phenomenon is encouraging for obtaining the [am + α-Al] mixture over a wide range of high temperature effective for the formation of Al-based high-strength nanostructured bulk alloys by warm working.
ABSTRACT
Carbon nanotubes have been of great interest because of their simplicity and ease of synthesis. The novel properties of nanostructured carbon nanotubes such as high surface area, good stiffness, and resilience have been explored in many engineering applications. Research on carbon nanotubes have shown the application in the field of energy storage, hydrogen storage, electrochemical supercapacitor, field-emitting devices, transistors, nanoprobes and sensors, composite material, templates, etc. For commercial applications, large quantities and high purity of carbon nanotubes are needed. Different types of carbon nanotubes can be synthesized in various ways. The most common techniques currently practiced are arc discharge, laser ablation, and chemical vapor deposition and flame synthesis. The purification of CNTs is carried out using various techniques mainly oxidation, acid treatment, annealing, sonication, filtering chemical functionalization, etc. However, high-purity purification techniques still have to be developed. Real applications are still under development. This paper addresses the current research on the challenges that are associated with synthesis methods, purification methods, and dispersion and toxicity of CNTs within the scope of different engineering applications, energy, and environmental impact.
ABSTRACT
In this paper, Mg0.5Zn0.5-Cu(x)Fe2O4 ferrites nanoparticles were synthesized by facile co-precipitation route and characterized in detail in terms of their structural, electrical and magnetic properties as a function of Cu concentration. The prepared samples have cubic spinel phase as confirmed by X-ray diffraction patterns. The decrease of the lattice constant and increase of X-ray density indicate the solubility of Cu ions in the spinel lattice. The AC conductivity measurements between 300 K and 773 K at different frequencies 1 KHz up to 1 MHz, showed two different behaviors as semiconductor-like at high temperature and frequency depending behavior associated with dispersion phenomena at low temperatures. The conduction mechanism in the system is influenced by Cu concentration and the dominant one is the hopping conduction mechanism. Dielectric measurements at the same conditions of temperatures and frequencies exhibited that the dielectric loss increases with increasing the temperature and decreasing the frequency indicating the semiconducting nature of the ferrite compounds. An anomalous behavior of the dielectric loss is observed in samples with high Cu content which explained in terms of resonance between frequency accompanied the electronic hopping and the frequency of the external electric field. The analysis of Mössbauer spectra revealed that copper free compound is super-paramagnetically relaxed in nature and zinc free compound demonstrates ferrimagnetic order. Moreover, hyperfine field spectrum shows the migration of Cu ions from octahedral to tetrahedral site in zinc free compound.
ABSTRACT
Bulk samples of Ga25Se(F5-x)Te(x) chalcogenides were prepared by melt quenching technique. The glassy nature of these alloys was verified by X-ray diffraction. The morphology of these as-prepared alloys was studied using field emission scanning electron microscopy. Kinetics of crystallization in these glassy alloys was studied under non-isothermal conditions at different heating rates (5, 10, 15, 20 and 25 K/min) using differential scanning calorimetry. The value of glass transition and crystallization temperature was found to be composition and heating-rate dependent. The value of order parameter indicates that the crystallization was due to volume nucleation with two dimensional growths. The activation energy of crystallization and activation energy of glass transition were determined from the heating rate dependence of glass transition and crystallization temperature. Both the activation energy for glass transition and the activation energy of crystallization were found to decrease from 130.05 to 102.99 kJ/mole and from 130.05 to 102.99 kJ/mole respectively with increasing Te content in Ga-Se system.
ABSTRACT
In this paper, we report a successful growth of zinc oxide nanowire networks by simple thermal evaporation process using metallic zinc powder in the presence of oxygen. The morphological investigations of the synthesized nanowire networks are conducted by using field emission scanning electron microscopy (FESEM) which reveals that the grown products are in high-density over the whole substrate surface and possessing nanowire networks like structures. The structural and compositional properties of the grown nanowire networks are analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), respectively which confirm that the synthesized products are well-crystalline, with wurtzite hexagonal phase ZnO. The as-grown ZnO nanowire networks grown on silicon substrate are utilized to fabricate n-ZnO/p-Si heterojunction diode and presented in this paper. The I-V characteristics of the fabricated heterojunction diode at different temperatures (77 K-477 K) are also investigated. High values of quality factor, which are obtained from this study, indicate a non-ideal behavior of the fabricated device. The mean barrier height of -0.84 eV is also estimated and presented in this paper.