Hydrogen-Atom Electronic Basis Sets for Multicomponent Quantum Chemistry.

Multicomponent methods are a conceptually simple way to include nuclear quantum effects into quantum chemistry calculations. In multicomponent methods, the electronic molecular orbitals are described using the linear combination of atomic orbitals approximation. This requires the selection of a one-particle electronic basis set which, in practice, is commonly a correlation-consistent basis set. In multicomponent method studies, it has been demonstrated that large electronic basis sets are required for quantum hydrogen nuclei to accurately describe electron-nuclear correlation. However, as we show in this study, much of the need for large electronic basis sets is due to the correlation-consistent electronic basis sets not being optimized to describe nuclear properties and electron-nuclear correlation. Herein, we introduce a series of correlation-consistent electronic basis sets for hydrogen atoms called cc-pVnZ-mc with additional basis functions optimized to reproduce multicomponent density functional theory protonic densities. These new electronic basis sets are shown to yield better protonic densities with fewer electronic basis functions than the standard correlation-consistent basis sets and reproduce other protonic properties such as proton affinities and protonic excitation energies, even though they were not optimized for these purposes. The cc-pVnZ-mc basis sets should enable multicomponent many-body calculations on larger systems due to the improved computational efficiency they provide for a given level of accuracy.

Multicomponent heat-bath configuration interaction with the perturbative correction for the calculation of protonic excited states.

In this study, we extend the multicomponent heat-bath configuration interaction (HCI) method to excited states. Previous multicomponent HCI studies have been performed using only the variational stage of the HCI algorithm as they have largely focused on the calculation of protonic densities. Because this study focuses on energetic quantities, a second-order perturbative correction after the variational stage is essential. Therefore, this study implements the second-order Epstein-Nesbet correction to the variational stage of multicomponent HCI for the first time. Additionally, this study introduces a new procedure for calculating reference excitation energies for multicomponent methods using the Fourier-grid Hamiltonian (FGH) method, which should allow the one-particle electronic basis set errors to be better isolated from errors arising from an incomplete description of electron-proton correlation. The excited-state multicomponent HCI method is benchmarked by computing protonic excitations of the HCN and FHF- molecules and is shown to be of similar accuracy to previous excited-state multicomponent methods such as the multicomponent time-dependent density-functional theory and equation-of-motion coupled-cluster theory relative to the new FGH reference values.

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids.

Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating a novel enhanced solar-blind UV-C photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized by p-CuO micro-pyramids. Self-assembled catalyst-free p-CuO micro-pyramid arrays are fabricated on a pre-ablated Si substrate by pulsed laser deposition without a need for a catalyst layer or seeding, while the solution-processed n-ZnO QDs are synthesized by the femtosecond-laser ablation in liquid technique. The photodetector is fabricated by spray-coating ZnO QDs on a CuO micro-pyramid array. The photodetector performance is optimized via a p-n junction structure as both p-ZnO QDs and p-CuO micro-pyramid layers are characterized by wide band gap energies. Two photodetectors (with and without CuO micro-pyramids) are fabricated to show the role of p-CuO in enhancing the device performance. The n-ZnO QD/p-CuO micro-pyramid/Si photodetector is characterized by a superior photo-responsivity of ∼956 mA/W at 244 nm with a faster photoresponse (<80 ms) and 260 nm cut-off compared to ZnO QDs/Si photodetectors, confirming that the p-CuO micro-pyramids enhance the device performance. The self-powered photoresponse with a high photo-responsivity of ∼29 mA/W is demonstrated. These high-responsivity solar-bind UV-C photodetector arrays can be used for a wide range of applications.

Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors.

High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3 . The yellow-phase CsPbI3 -based X-ray detector achieves a relatively high sensitivity of 83.6 µCGyair-1 cm-2 (under 1.7 mGyair s-1 at an electron field of 0.17 V µm-1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 µm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.

Modulating Electronic Structures of Armchair GaN Nanoribbons by Chemical Functionalization under an Electric Field Effect.

The electronic and magnetic properties of oxygen- and sulfur-passivated one-dimensional armchair GaN nanoribbons (A-GaNNRs) are revealed using both first-principles density-functional theory and ab initio molecular dynamics simulations. We explore that an applied external electric field can further modulate the electronic properties of both pristine and passivated A-GaNNRs, thus changing their properties (semiconducting-metallic-half-metallic). A-GaNNRs of 0.9-3.1 nm width are subjected to further investigations, which reveal that sulfur termination transforms pristine A-GaNNRs from direct into indirect band gap semiconductors, without affecting their nonmagnetic nature. On the other hand, oxygen passivation introduces spin-polarized behavior with a finite magnetic moment. Magnetism characteristics in both bare and sulfur-passivated A-GaNNRs are induced by applying a critical electric field along the direction of NR width. The passivated A-GaNNRs are more stable compared to bare ones, while sulfur-passivated A-GaNNRs exhibit higher stability at higher temperatures (>500 °C). Thus, our results suggest that A-GaNNRs can be used in a broad range of electronic, optoelectronic, and spintronic applications.

Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons.

We employ a first-principles calculations based density-functional-theory (DFT) approach to study the electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, the electrons, which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that metallic behavior is observed for the following passivation patterns: (i) when the B atom from one edge and the N atom from another edge are unpassivated. (ii) when the N atoms from both the edges are unpassivated. (iii) when the C atom from one edge and the N atom from another edge are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that the ABNCNRs exhibit a wide range of electronic and magnetic properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while the partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable as compared to the narrower ones.