Modification of the Surface Composition of PTB7-Th: ITIC Blend Using an Additive.

We investigated the effect of adding p-anisaldehyde (AA) solvent to the ink containing poly[[2,60-4,8-di(5-ethylhexylthienyl)benzo[1,2-b:3,3-b]dithiophene][3-fluoro-2[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7-Th) and 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:20,30-d0]-s-indaceno[1,2-b:5,6-b0]-dithiophene(ITIC) on the morphology of the active layer. The present study focuses on determining the effect of the additive on the compositions at the surface of the PTB7-Th: ITIC composite and its morphology, forming one side of the interface of the blend with the MoOX electrode, and the influence of the structural change on the performance of devices. Studies of device performance show that the addition of the additive AA leads to an improvement in device performance. Upon the addition of AA, the concentration of PTB7-Th at the surface of the bulk heterojunction (BHJ) increases, causing an increase in surface roughness of the surface of the BHJ. This finding contributes to an understanding of the interaction between the donor material and high work function electrode/interface material. The implications for the interface are discussed.

Surface Passivation of Sputtered NiO x Using a SAM Interface Layer to Enhance the Performance of Perovskite Solar Cells.

Sputtered NiO x (sp-NiO x ) is a preferred hole transporting material for perovskite solar cells because of its hole mobility, ease of manufacturability, good stability, and suitable Fermi level for hole extraction. However, uncontrolled defects in sp-NiO x can limit the efficiency of solar cells fabricated with this hole transporting layer. An interfacial layer has been proposed to modify the sp-NiO x /perovskite interface, which can contribute to improving the crystallinity of the perovskite film. Herein, a 2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer was used to modify an sp-NiO x surface. We found that the MeO-2PACz interlayer improves the quality of the perovskite film due to an enlarged domain size, reduced charge recombination at the sp-NiO x /perovskite interface, and passivation of the defects in sp-NiO x surfaces. In addition, the band tail states are also reduced, as indicated by photothermal deflection spectroscopy, which thus indicates a reduction in defect levels. The overall outcome is an improvement in the device efficiency from 11.9% to 17.2% due to the modified sp-NiO x /perovskite interface, with an active area of 1 cm2 (certified efficiency of 16.25%). On the basis of these results, the interfacial engineering of the electronic properties of sp-NiO x /MeO-2PACz/perovskite is discussed in relation to the improved device performance.

Continuous flow photolytic reduction of graphene oxide.

Reduced graphene oxide (rGO) is generated from GO dispersed in water under continuous flow in the absence of harsh reducing agents, in a vortex fluidic device, such that the processing is scalable with uniformity of the product. This involves simultaneously UV irradiating (λ = 254 nm, 20 W) the dynamic thin film in the rapidly rotating glass tube in the microfluidic platform. The rGO is comparable to that formed using waste generating chemical based processing, with a film of the material having a resistance of 2.2 × 105 Ω and a remarkably high conductivity of 2 × 104 S cm-1.