Parasitological, Serological and Molecular Prevalence of Trypanosoma evansi among Arabian Camels (Camelus dromedaries) with Evaluation of Antitrypanosomal Drugs.

PURPOSE: This study was carried out to assess the prevalence of Trypanosoma evansi infection in naturally diseased Dromedary camels in Dammam, Eastern region of Saudi Arabia. The detection of Trypanosoma evansi was performed using the parasitological, serological, and molecular diagnosis and a comparison between such methods were analyzed. In addition, evaluation of therapeutic efficacy of selected antitrypanosomal drugs, cymelarsan and quinapyrmine (aquin-1.5), was trialed for treatment of diagnosed infected cases. METHODS: A total 350 randomly selected camels were evaluated using thin blood smear (TBS), RoTat1.2 PCR and CATT/T. evansi techniques. RESULTS: The total prevalence was 6.9%, 7.7%, and 32.8% by TBS, RoTat1.2 PCR and CATT/T. evansi techniques, respectively. Although PCR detect T. evansi in more samples than TBS, the agreement was good (K = 0.9). Among the CATT/T. evansi results, PCR detect T. evansi in 12 and 15 CATT positive and negative camels, respectively, with low agreement (Kappa = 0.1). The use of cymelarsan and quinapyramine sulfate in the treatment of naturally infected cases demonstrated a very efficient therapeutic response. CONCLUSION: It was found that 1. Comparing the CATT/T. evansi and PCR results, the positivity of CATT was higher than PCR detection, while the agreement was poor (K = 0.1). 2. Cymelarsan and aquin-1.5 proved to be effective in the treatment of naturally infected camels, but cymelarsan presented with higher effectiveness (100%) than aquin-treated camels (83.3%). a 3. The use of cymelarsan and CATT is recommended for disease treatment and control.

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds.

Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples with more than 5% of indium drops by more than 1 order of magnitude when the temperature is decreased while it remains constant for lower indium content. This drop is attributed to a freezing of photoelectron transport in p-InGaN due to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is supported by the disappearance at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.

Designing Highly Directional Luminescent Phased-Array Metasurfaces with Reciprocity-Based Simulations.

Phased-array metasurfaces grant the ability to arbitrarily shape the wavefront of light. As such, they have been used as various optical elements including waveplates, lenses, and beam deflectors. Luminescent metasurfaces, on the other hand, have largely comprised uniform arrays and are therefore unable to provide the same control over the wavefront of emitted light. Recently, phased-array control of the wavefront of spontaneous emission has been experimentally demonstrated in luminescent phased-array metalenses and beam deflectors. However, current luminescent metasurface beam deflectors exhibit unidirectional emission for only p-polarized light. In this paper, we use a reciprocal simulation strategy to explain the polarization disparity and improve the directionality of incoherent emission from current quantum-well emitting phased-array metasurfaces. We also design complementary metasurfaces to direct emission from systems where emission originates from alternate quantum mechanical processes.

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors.

A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au-GaN-Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces, it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 1012 Jones, respectively, making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.

Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission.

Phased-array metasurfaces have been extensively used for wavefront shaping of coherent incident light. Due to the incoherent nature of spontaneous emission, the ability to similarly tailor photoluminescence remains largely unexplored. Recently, unidirectional photoluminescence from InGaN/GaN quantum-well metasurfaces incorporating one-dimensional phase profiles has been shown. However, the possibility of generating arbitrary two-dimensional waveforms-such as focused beams-is not yet realized. Here, we demonstrate two-dimensional metasurface axicons and lenses that emit collimated and focused beams, respectively. First, we develop off-axis meta-axicon/metalens equations designed to redirect surface-guided waves that dominate the natural emission pattern of quantum wells. Next, we show that photoluminescence properties are well predicted by passive transmission results using suitably engineered incident light sources. Finally, we compare collimating and focusing performances across a variety of different light-emitting metasurface axicons and lenses. These generated two-dimensional phased-array photoluminescence waveforms facilitate future development of light sources with arbitrary functionalities.

25(OH)D Serum Level in Non-Diabetic and Type II Diabetic Patients: A Cross-Sectional Study.

Background Diabetes mellitus is a major disease worldwide. In Saudi Arabia, it is considered to be the most common disease in the country. Diabetes mellitus has been also found to be associated with 25(OH)D (vitamin D) deficiency. In Saudi Arabia, sunlight is considered a major source for vitamin D. Saudi Arabia is popular for sunny weather most of the year, in which people can get vitamin D from the sun. However, vitamin D deficiency is common in Saudi Arabia, and its deficiency can increase blood glucose levels. We conducted a study to determine the reason for vitamin D deficiency in Saudi Arabia and to assess the relationship of diabetes mellitus with vitamin D. Aim of the work  This study is aimed to assess the incidence of vitamin D deficiency in non-diabetic and type II diabetic patients in the King Faisal University (KFU) Health Center in the Al-Ahsa region. Methods Our study is a cross-sectional study that was carried out at the KFU Health Center in Saudi Arabia. Ethical approval was obtained from the Ethics and Research Committee at the College of Medicine at King Faisal University. The study period was from January 2016 to April 2016. We collected each patient's vitamin D serum level, glycosylated hemoglobin (HbA1c), and fasting blood glucose at the same time for each patient's particular visit to the hospital. Data were analyzed using the Statistical Package for Social Sciences (SPSS) (IBM SPSS Statistics, Armonk, NY).  Results Our results showed that 89.53% of the patients had a vitamin D level below the normal range. There was a higher incidence of vitamin D deficiency in females (81.67%) than in males (65.27%) (p-value = 0.001). The incidence of vitamin D deficiency was greater in Saudi (82.19%) than non-Saudi patients (68.40%) (p-value = 0.001), as well as in diabetics (89.68%) than non-diabetics (76.12%) patients (p-value = 0.001). Within each group, the incidence of vitamin D deficiency was higher in females than in males. The incidence of vitamin D deficiency was highest in the age group of 21 to 40 years old (86.19%) and lowest in the age group of one to 20 years old (66.1%). The results showed an inverse relationship between the vitamin D level and both fasting blood glucose and HbA1c (independent sample t-test) were used for correlation. The mean fasting glucose was higher in the deficiency group (165.55) as compared to the insufficiency group (118.67). Also, the mean HbA1c was higher in the deficiency group (8.06) as compared to the insufficiency group (7.23) (p-value = 0.030).  Conclusions There was a high incidence of vitamin D deficiency among KFU Health Center patients. The vitamin D level was inversely proportional to the level of fasting glucose and HbA1c. There is an evident role of vitamin D deficiency on glucose tolerance in diabetic patients.

Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes.

We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition.

Optoelectronic effects of sidewall passivation on micro-sized light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) were investigated. Moreover, significant enhancements of the optical and electrical effects by using ALD were compared with conventional sidewall passivation method, namely plasma-enhanced chemical vapor deposition (PECVD). ALD yielded uniform light emission and the lowest amount of leakage current for all µLED sizes. The importance of sidewall passivation was also demonstrated by comparing leakage current and external quantum efficiency (EQE). The peak EQEs of 20 × 20 µm2 µLEDs with ALD sidewall passivation and without sidewall passivation were 33% and 24%, respectively. The results from ALD sidewall passivation revealed that the size-dependent influences on peak EQE can be minimized by proper sidewall treatment.

Development of high performance green c-plane III-nitride light-emitting diodes.

The effect of employing an AlGaN cap layer in the active region of green c-plane light-emitting diodes (LEDs) was studied. Each quantum well (QW) and barrier in the active region consisted of an InGaN QW and a thin Al0.30Ga0.70N cap layer grown at a relatively low temperature and a GaN barrier grown at a higher temperature. A series of experiments and simulations were carried out to explore the effects of varying the Al0.30Ga0.70N cap layer thickness and GaN barrier growth temperature on LED efficiency and electrical performance. We determined that the Al0.30Ga0.70N cap layer should be around 2 nm and the growth temperature of the GaN barrier should be approximately 75° C higher than the growth temperature of the InGaN QW to maximize the LED efficiency, minimize the forward voltage, and maintain good morphology. Optimized Al0.30Ga0.70N cap growth conditions within the active region resulted in high efficiency green LEDs with a peak external quantum efficiency (EQE) of 40.7% at 3 A/cm2. At a normal operating condition of 20 A/cm2, output power, EQE, forward voltage, and emission wavelength were 13.8 mW, 29.5%, 3.5 V, and 529.3 nm, respectively.

Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.

We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no InGaN clusters were observed by atom probe tomography measurements. The semipolar (11-22) 550 nm InGaN LEDs (0.1 mm2 size) show an output power of 2.4 mW at 100 mA and a peak external quantum efficiency of 1.3% with a low efficiency drop. In addition, the LEDs exhibit a small blue-shift of only 11 nm as injection current increases from 5 to 100 mA. These results suggest the potential to produce high efficiency semipolar InGaN LEDs with long emission wavelength on large-area sapphire substrates with economical feasibility.

High luminous efficacy green light-emitting diodes with AlGaN cap layer.

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.