Normalized differential method for improving the signal-to-noise ratio of a distributed acoustic sensor.

We experimentally introduce a normalized differential method to enhance the time domain signal-to-noise ratio (SNR) of an optical fiber distributed acoustic sensor (DAS). The reported method is calibrated against the typical differential method in noisy DAS systems, including those utilizing a relatively wide linewidth laser or few-mode fiber. In these two systems, the normalized differential method respectively identifies the position information of various vibration events with 1.7 dB and 0.53 dB SNR improvement. We further demonstrate the ability to locate positions along a fiber that are subjected to vibrations of frequencies higher than the theoretical maximum, but without determining these frequencies.

Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter.

We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ∼89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity; this feat was achieved with a combination of optimal spectral alignment of the optical cavity modes with the perovskite optical gain, an adequate Q-factor of the microcavity, adequate thermal stability, and improved material quality with a smooth, passivated, and annealed thin active layer. Our results signify a way towards efficient CW perovskite emitter operation and electrical injection using low-cost fabrication methods for addressing monolithic optoelectronic integration and lasing in the green gap.

Band Alignment at GaN/Single-Layer WSe2 Interface.

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications.

Group-III-nitride laser diode (LD)-based solid-state lighting device has been demonstrated to be droop-free compared to light-emitting diodes (LEDs), and highly energy-efficient compared to that of the traditional incandescent and fluorescent white light systems. The YAG:Ce3+ phosphor used in LD-based solid-state lighting, however, is associated with rapid degradation issue. An alternate phosphor/LD architecture, which is capable of sustaining high temperature, high power density, while still intensity- and bandwidth-tunable for high color-quality remained unexplored. In this paper, we present for the first time, the proof-of-concept of the generation of high-quality white light using an InGaN-based orange nanowires (NWs) LED grown on silicon, in conjunction with a blue LD, and in place of the compound-phosphor. By changing the relative intensities of the ultrabroad linewidth orange and narrow-linewidth blue components, our LED/LD device architecture achieved correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1, a value unsurpassed by the YAG-phosphor/blue-LD counterpart. The white-light wireless communications was implemented using the blue LD through on-off keying (OOK) modulation to obtain a data rate of 1.06 Gbps. We therefore achieved the best of both worlds when orange-emitting NWs LED are utilized as "active-phosphor", while blue LD is used for both color mixing and optical wireless communications.

Optical constants of CH3NH3PbBr3 perovskite thin films measured by spectroscopic ellipsometry.

The lack of optical constants information for hybrid perovskite of CH3NH3PbBr3 in thin films form can delay the progress of efficient LED or laser demonstration. Here, we report on the optical constants (complex refractive index and dielectric function) of CH3NH3PbBr3 perovskite thin films using spectroscopic ellipsometry. Due to the existence of voids, the refractive index of the thin films is around 8% less than the single crystals counterpart. The energy bandgap is around 2.309 eV as obtained from photoluminescence and spectrophotometry spectra, and calculated from the SE analysis. The precise measurement of optical constants will be useful in designing optical devices using CH3NH3PbBr3 thin films.