ABSTRACT
Vanadium dioxide (VO2)-based thin films have received considerable attention in recent years due to their superior performance in creating next-generation color-rendering materials. The near-room-temperature metal-insulator transition of VO2 promises the advantage of active color tuning in the visible wavelength range. Although various results of dynamic color generation combined with plasmonic nanostructures are currently being investigated, so far, very few studies have addressed the visible-light optical performance of pure VO2 thin films prepared on conventional substrates. This article shows in detail the phase-transition behavior of VO2 thin films in the visible wavelength range of 400-750 nm prepared on glass with subsequent annealing at temperatures of 350, 400, 450, and 500 °C. The results show an anomalous phase transition reducing the overall RGB reflectivity correlated with the crystallization behavior of the VO2 phase and scattering effect. The sample annealed at 350 °C shows the smallest phase transition at 47 °C, correlating with a crystallite size of 7 nm. The blue band reflectivity anomaly after annealing at 450 °C was considered an effect of the secondary reflection. The results of this research could play a huge role in the production of active-switching photonic devices, color-managed reflectors, and temperature indicators.
ABSTRACT
This work demonstrates the fabrication of Cu-doped ZnO films by Cu solution coating method. Cu ink was spin coated on ZnO thin films prepared by e-beam deposition. After curing and annealing at high temperatures, structural, morphological and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectrofluorometer, respectively. The XRD results showed that ZnO films formed polycrystalline with a hexagonal wurtzite structure, and the grain size increased with increasing the annealing temperature from 500 to 850 °C. The changes in lattice parameters were caused by grain size, strain, and residual stress. Morphological analysis have revealed that the Cu-doped ZnO film after annealing at 500 °C has flat surface with uniformly distributed grain size, which became porous after higher temperature annealing process. Energy dispersive spectroscopy (EDS) and photoluminescence spectras have shown the presence of Zn, Cu, and O elements, and combined violet, blue, green and weak red emissions between 350 and 650 nm in the ZnO films, respectively.
