ABSTRACT
Cyanine dyes are fluorescent organic salts with intrinsic conductivity for ionic and electronic charges. Recently ( J. Am. Chem. Soc. 2013 , 135 , 18008 - 18011 ), these features have been exploited in cyanine light-emitting electrochemical cells (LECs). Here, we demonstrate that stacked, constant-voltage driven trimethine cyanine LECs with various counteranions develop a p-i-n junction that is composed of p- and n-doped zones and an intrinsic region where light-emission occurs. We introduce a method that combines spectral photocurrent response measurements with optical modeling and find that at maximum current the intrinsic region is centered at â¼37% away from the anode. Transient capacitance, photoluminescence and attenuance experiments indicate a device situation with a narrow p-doped region, an undoped region that occupies â¼72% of the dye layer thickness and an n-doped region with a maximum doping concentration of 0.08 dopant/cyanine molecule. Finally, we observe that during device relaxation the parent cyanines are not reformed. We ascribe this to irreversible reactions between doped cyanine radicals. For sterically conservative cyanine dyes, this suggests that undesired radical decomposition pathways limit the LEC long-term stability in general.
ABSTRACT
We present and experimentally validate a computational model for the light propagation in thin-film solar cells that integrates non-paraxial scalar diffraction theory with non-sequential ray-tracing. The model allows computing the spectral layer absorbances of solar cells with micro- and nano-textured interfaces directly from measured surface topographies. We can thus quantify decisive quantities such as the parasitic absorption without relying on heuristic scattering intensity distributions. In particular, we find that the commonly used approximation of Lambertian scattering intensity distributions for internal light propagation is violated even for solar cells on rough textured substrates. More importantly, we demonstrate how both scattering and parasitic absorption must be controlled to maximize photocurrent.
ABSTRACT
Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (~±50 V) and OFF current (10(5)×!) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only marginally (~2×). Our results demonstrate that the substrate is not a mere passive mechanical support.