Thermal transport in epitaxial Si1-x Ge x alloy nanowires with varying composition and morphology.

We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-x Ge x alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy (SThM), while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-x Ge x alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 W m-1 K-1. These results provide valuable information in growth processes and show the great capability of the SThM technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional techniques.

Elastic Properties of Few Nanometers Thick Polycrystalline MoS2 Membranes: A Nondestructive Study.

The performance gain-oriented nanostructurization has opened a new pathway for tuning mechanical features of solid matter vital for application and maintained performance. Simultaneously, the mechanical evaluation has been pushed down to dimensions way below 1 µm. To date, the most standard technique to study the mechanical properties of suspended 2D materials is based on nanoindentation experiments. In this work, by means of micro-Brillouin light scattering we determine the mechanical properties, that is, Young modulus and residual stress, of polycrystalline few nanometers thick MoS2 membranes in a simple, contact-less, nondestructive manner. The results show huge elastic softening compared to bulk MoS2, which is correlated with the sample morphology and the residual stress.

Thermal conductivity and air-mediated losses in periodic porous silicon membranes at high temperatures.

Heat conduction in silicon can be effectively engineered by means of sub-micrometre porous thin free-standing membranes. Tunable thermal properties make these structures good candidates for integrated heat management units such as waste heat recovery, rectification or efficient heat dissipation. However, possible applications require detailed thermal characterisation at high temperatures which, up to now, has been an experimental challenge. In this work we use the contactless two-laser Raman thermometry to study heat dissipation in periodic porous membranes at high temperatures via lattice conduction and air-mediated losses. We find the reduction of the thermal conductivity and its temperature dependence closely correlated with the structure feature size. On the basis of two-phonon Raman spectra, we attribute this behaviour to diffuse (incoherent) phonon-boundary scattering. Furthermore, we investigate and quantify the heat dissipation via natural air-mediated cooling, which can be tuned by engineering the porosity.Nanostructuring of silicon allows acoustic phonon engineering, but the mechanism of related thermal transport in these structures is not fully understood. Here, the authors study the heat dissipation in silicon membranes with periodic nanoholes and show the importance of incoherent scattering.

A self-stabilized coherent phonon source driven by optical forces.

We report a novel injection scheme that allows for "phonon lasing" in a one-dimensional opto-mechanical photonic crystal, in a sideband unresolved regime and with cooperativity values as low as 10(-2). It extracts energy from a cw infrared laser source and is based on the triggering of a thermo-optical/free-carrier-dispersion self-pulsing limit-cycle, which anharmonically modulates the radiation pressure force. The large amplitude of the coherent mechanical motion acts as a feedback that stabilizes and entrains the self-pulsing oscillations to simple fractions of the mechanical frequency. A manifold of frequency-entrained regions with two different mechanical modes (at 54 and 122 MHz) are observed as a result of the wide tuneability of the natural frequency of the self-pulsing. The system operates at ambient conditions of pressure and temperature in a silicon platform, which enables its exploitation in sensing, intra-chip metrology or time-keeping applications.

A one-dimensional optomechanical crystal with a complete phononic band gap.

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of multiple OM elements in a single chip and provide gigahertz phonons suitable for coherent phonon manipulation. Different demonstrations of coupling of infrared photons and gigahertz phonons in cavities created by inserting defects on OM crystals have been performed. However, the considered structures do not show a complete phononic bandgap, which should enable longer lifetimes, as acoustic leakage is minimized. Here we demonstrate the excitation of acoustic modes in a one-dimensional OM crystal properly designed to display a full phononic bandgap for acoustic modes at 4 GHz. The modes inside the complete bandgap are designed to have high-mechanical Q-factors, limit clamping losses and be invariant to fabrication imperfections.

A novel contactless technique for thermal field mapping and thermal conductivity determination: two-laser Raman thermometry.

We present a novel contactless technique for thermal conductivity determination and thermal field mapping based on creating a thermal distribution of phonons using a heating laser, while a second laser probes the local temperature through the spectral position of a Raman active mode. The spatial resolution can be as small as 300 nm, whereas its temperature accuracy is ±2 K. We validate this technique investigating the thermal properties of three free-standing single crystalline Si membranes with thickness of 250, 1000, and 2000 nm. We show that for two-dimensional materials such as free-standing membranes or thin films, and for small temperature gradients, the thermal field decays as T(r) ∝ ln(r) in the diffusive limit. The case of large temperature gradients within the membranes leads to an exponential decay of the thermal field, T ∝ exp[ - A·ln(r)]. The results demonstrate the full potential of this new contactless method for quantitative determination of thermal properties. The range of materials to which this method is applicable reaches far beyond the here demonstrated case of Si, as the only requirement is the presence of a Raman active mode.

Lifetimes of confined acoustic phonons in ultrathin silicon membranes.

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultrathin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time of the first-order dilatational mode decreases significantly from ~4.7 ns to 5 ps with decreasing membrane thickness from ~194 to 8 nm. The experimental results are compared with theories considering both intrinsic phonon-phonon interactions and extrinsic surface roughness scattering including a wavelength-dependent specularity. Our results provide insight to understand some of the limits of nanomechanical resonators and thermal transport in nanostructures.