Your browser doesn't support javascript.
loading
Show: 20 | 50 | 100
Results 1 - 2 de 2
Filter
Add more filters










Database
Language
Publication year range
1.
Nanotechnology ; 20(40): 405209, 2009 Oct 07.
Article in English | MEDLINE | ID: mdl-19752499

ABSTRACT

This paper proposes a solid-state sensor that can detect the position of incident photons with a high spatial resolution. The sensor consists of a two-dimensional array of single-electron oscillators, each coupled to its neighbors through coupling capacitors. An incident photon triggers an excitatory circular wave of electron tunneling in the oscillator array. The wave propagates in all directions to reach the periphery of the array. By measuring the arrival time of the wave at the periphery, we can know the position of the incident photon. The tunneling wave's generation, propagation, arrival at the array periphery, and the determination of incident photon positions are demonstrated with the results of Monte Carlo based computer simulations.


Subject(s)
Nanotechnology/methods , Photons , Equipment Design
2.
J Nanosci Nanotechnol ; 2(3-4): 333-42, 2002.
Article in English | MEDLINE | ID: mdl-12908260

ABSTRACT

This paper describes a majority-logic gate device that will be useful in developing single-electron integrated circuits. The gate device consists of two identical single-electron boxes combined to form a balanced pair. It accepts three inputs and produces a majority-logic output by using imbalances caused by the input signals; it produces a 1 output if two or three inputs are 1, and a 0 output if two or three inputs are 0. We combine these gate devices into two subsystems, a shift register and an adder, and demonstrate their operation by computer simulation. We also propose a method of fabricating the unit element of the gate device, a minute dot with four coupling arms. We demonstrate by experiments that it is possible to arrange these unit elements on a GaAs substrate, in a self-organizing manner, by means of a process technology that is based on selective-area metalorganic vapor-phase epitaxy.


Subject(s)
Crystallization/methods , Electronics/instrumentation , Models, Theoretical , Nanotechnology/instrumentation , Signal Processing, Computer-Assisted/instrumentation , Aluminum/chemistry , Arsenicals/chemical synthesis , Arsenicals/chemistry , Computer Simulation , Electric Capacitance , Electrochemistry/instrumentation , Electrochemistry/methods , Electrons , Equipment Design , Feasibility Studies , Gallium/chemistry , Miniaturization , Nanotechnology/methods , Semiconductors , Static Electricity
SELECTION OF CITATIONS
SEARCH DETAIL
...