Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS2 and ZrSe2.

Recent reports on thermal and thermoelectric properties of emerging 2D materials have shown promising results. Among these materials are Zirconium-based chalcogenides such as zirconium disulfide (ZrS2 ), zirconium diselenide (ZrSe2 ), zirconium trisulfide (ZrS3 ), and zirconium triselenide (ZrSe3 ). Here, the thermal properties of these materials are investigated using confocal Raman spectroscopy. Two different and distinctive Raman signatures of exfoliated ZrX2 (where X = S or Se) are observed. For 2D-ZrX2 , Raman modes are in alignment with those reported in literature. However, for quasi 1D-ZrX2 , Raman modes are identical to exfoliated ZrX3 nanosheets, indicating a major lattice transformation from 2D to quasi-1D. Raman temperature dependence for ZrX2 are also measured. Most Raman modes exhibit a linear downshift dependence with increasing temperature. However, for 2D-ZrS2 , a blueshift for A1g mode is detected with increasing temperature. Finally, phonon dynamics under optical heating for ZrX2 are measured. Based on these measurements, the calculated thermal conductivity and the interfacial thermal conductance indicate lower interfacial thermal conductance for quasi 1D-ZrX2 compared to 2D-ZrX2 , which can be attributed to the phonon confinement in 1D. The results demonstrate exceptional thermal properties for Zirconium-based materials, making them ideal for thermoelectric device applications and future thermal management strategies.

Highly sensitive, scalable, and rapid SARS-CoV-2 biosensor based on In2O3 nanoribbon transistors and phosphatase.

Developing convenient and accurate SARS-CoV-2 antigen test and serology test is crucial in curbing the global COVID-19 pandemic. In this work, we report an improved indium oxide (In2O3) nanoribbon field-effect transistor (FET) biosensor platform detecting both SARS-CoV-2 antigen and antibody. Our FET biosensors, which were fabricated using a scalable and cost-efficient lithography-free process utilizing shadow masks, consist of an In2O3 channel and a newly developed stable enzyme reporter. During the biosensing process, the phosphatase enzymatic reaction generated pH change of the solution, which was then detected and converted to electrical signal by our In2O3 FETs. The biosensors applied phosphatase as enzyme reporter, which has a much better stability than the widely used urease in FET based biosensors. As proof-of-principle studies, we demonstrate the detection of SARS-CoV-2 spike protein in both phosphate-buffered saline (PBS) buffer and universal transport medium (UTM) (limit of detection [LoD]: 100 fg/mL). Following the SARS-CoV-2 antigen tests, we developed and characterized additional sensors aimed at SARS-CoV-2 IgG antibodies, which is important to trace past infection and vaccination. Our spike protein IgG antibody tests exhibit excellent detection limits in both PBS and human whole blood ((LoD): 1 pg/mL). Our biosensors display similar detection performance in different mediums, demonstrating that our biosensor approach is not limited by Debye screening from salts and can selectively detect biomarkers in physiological fluids. The newly selected enzyme for our platform performs much better performance and longer shelf life which will lead our biosensor platform to be capable for real clinical diagnosis usage. Electronic Supplementary Material: Supplementary material (materials and methods for device fabrication, functionalization of In2O3 devices, photographs of the liquid gate measurement setup, mobilities of the nine devices labeled in Fig. 1(b), family curves of I DS-V DS with the liquid gate setup and current change after bubbling the substrate solution (current vs. time curve for S1 antigen detection)) is available in the online version of this article at 10.1007/s12274-022-4190-0.

One-Step Vapor-Phase Synthesis and Quantum-Confined Exciton in Single-Crystal Platelets of Hybrid Halide Perovskites.

To investigate the quantum confinement effect on excitons in hybrid perovskites, single-crystal platelets of CH3NH3PbBr3 are grown on mica substrates using one-step chemical vapor deposition. Photoluminescence measurements reveal a monotonous blue shift with a decreasing platelet thickness, which is accompanied by a significant increase in exciton binding energy from approximately 70 to 150 meV. Those phenomena can be attributed to the one-dimensional (1D) quantum confinement effect in the two-dimensional platelets. Furthermore, we develop an analytical model to quantitatively elucidate the 1D confinement effect in such quantum wells with asymmetric barriers. Our analysis indicates that the exciton Bohr radius of single-crystal CH3NH3PbBr3 is compressed from 4.0 nm for the thick (26.2 nm) platelets to 2.2 nm for the thin (5.9 nm) ones. The critical understanding of the 1D quantum confinement effect and the development of a general model to elucidate the exciton properties of asymmetric semiconductor quantum wells pave the way toward developing high-performance optoelectronic heterostructures.

Surface Properties of Laser-Treated Molybdenum Disulfide Nanosheets for Optoelectronic Applications.

Transition metal dichalcogenide two-dimensional materials have attracted significant attention due to their unique optical, mechanical, and electronic properties. For example, molybdenum disulfide (MoS2) exhibits a tunable band gap that strongly depends on the numbers of layers, which makes it an attractive material for optoelectronic applications. In addition, recent reports have shown that laser thinning can be used to engineer an MoS2 monolayer with specific shapes and dimensions. Here, we study laser-thinned MoS2 in both ambient and vacuum conditions via confocal µ-Raman spectroscopy, imaging X-ray photoelectron spectroscopy (i-XPS), and atomic force microscopy (AFM). For low laser powers in ambient environments, there is insufficient energy to oxidize MoS2, which leads to etching and redeposition of amorphous MoS2 on the nanosheet as confirmed by AFM. At high powers in ambient, the laser energy and oxygen environment enable both MoS2 nanoparticle formation and nanosheet oxidation as revealed in AFM and i-XPS. At comparable laser power densities in vacuum, MoS2 oxidation is suppressed and the particle density is reduced as compared to ambient. The extent of nanoparticle formation and nanosheet oxidation in each of these regimes is found to be dependent on the number of layers and laser treatment time. Our results can shed some light on the underlying mechanism of which atomically thin MoS2 nanosheets exhibit under high incident laser power for future optoelectronic applications.

Highly Sensitive and Wearable In2O3 Nanoribbon Transistor Biosensors with Integrated On-Chip Gate for Glucose Monitoring in Body Fluids.

Nanoribbon- and nanowire-based field-effect transistor (FET) biosensors have stimulated a lot of interest. However, most FET biosensors were achieved by using bulky Ag/AgCl electrodes or metal wire gates, which have prevented the biosensors from becoming truly wearable. Here, we demonstrate highly sensitive and conformal In2O3 nanoribbon FET biosensors with a fully integrated on-chip gold side gate, which have been laminated onto various surfaces, such as artificial arms and watches, and have enabled glucose detection in various body fluids, such as sweat and saliva. The shadow-mask-fabricated devices show good electrical performance with gate voltage applied using a gold side gate electrode and through an aqueous electrolyte. The resulting transistors show mobilities of ∼22 cm2 V-1 s-1 in 0.1× phosphate-buffered saline, a high on-off ratio (105), and good mechanical robustness. With the electrodes functionalized with glucose oxidase, chitosan, and single-walled carbon nanotubes, the glucose sensors show a very wide detection range spanning at least 5 orders of magnitude and a detection limit down to 10 nM. Therefore, our high-performance In2O3 nanoribbon sensing platform has great potential to work as indispensable components for wearable healthcare electronics.

Review of Electronics Based on Single-Walled Carbon Nanotubes.

Single-walled carbon nanotubes (SWNTs) are extremely promising materials for building next-generation electronics due to their unique physical and electronic properties. In this article, we will review the research efforts and achievements of SWNTs in three electronic fields, namely analog radio-frequency electronics, digital electronics, and macroelectronics. In each SWNT-based electronic field, we will present the major challenges, the evolutions of the methods to overcome these challenges, and the state-of-the-art of the achievements. At last, we will discuss future directions which could lead to the broad applications of SWNTs. We hope this review could inspire more research on SWNT-based electronics, and accelerate the applications of SWNTs.

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H2 to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (ΦB) in a BP FET. When the Pd-contacted BP FET was exposed to 5% hydrogen concentrated Ar, the contact resistance (Rc) improved between the Pd electrodes and BP from ∼7.10 to ∼1.05 Ω·mm, surpassing all previously reported contact resistances in the literature for BP FETs. Additionally, with exposure to 5% hydrogen, the transconductance of the Pd-contacted BP FET was doubled. The results shown in this study illustrate the significance of choosing the right contact material for high-performance BP FETs in order to realize the real prospect of BP in electronic applications.

Raman Sensitive Degradation and Etching Dynamics of Exfoliated Black Phosphorus.

Layered black phosphorus has drawn much attention due to the existence of a band gap compared to the widely known graphene. However, environmental stability of black phosphorus is still a major issue, which hinders the realization of practical device applications. Here, we spatially Raman map exfoliated black phosphorus using confocal fast-scanning technique at different time intervals. We observe a Raman intensity modulation for , B2g, and modes. This Raman modulation is found to be caused by optical interference, which gives insights into the oxidation mechanism. Finally, we examine the fabrication compatible PMMA coating as a viable passivation layer. Our measurements indicate that PMMA passivated black phosphorus thin film flakes can stay pristine for a period of 19 days when left in a dark environment, allowing sufficient time for further nanofabrication processing. Our results shed light on black phosphorus degradation which can aid future passivation methods.

Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors.

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm2 V-1 s-1, on-off current ratio Ion/Ioff ∼ 104, and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances.

Competing Photocurrent Mechanisms in Quasi-Metallic Carbon Nanotube pn Devices.

Photodetectors based on quasi-metallic carbon nanotubes exhibit unique optoelectronic properties. Due to their small bandgap, photocurrent generation is possible at room temperature. The origin of this photocurrent is investigated to determine the underlying mechanism, which can be photothermoelectric effect or photovoltaic effect, depending on the bandgap magnitude of the quasi-metallic nanotube.

Zener tunneling and photocurrent generation in quasi-metallic carbon nanotube pn-devices.

We investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal diode behavior, as limited by the diffusive transport of carriers. We observe substantial photocurrents at room temperature, suggesting that these quasi-metallic pn-devices may have a broader impact in optoelectronic devices. A new technique based on photocurrent spectroscopy is presented to identify the unique chirality of nanotubes in a functional device. This chirality information is crucial in obtaining a theoretical understanding of the underlying device physics that depends sensitively on nanotube chirality, as is the case for quasi-metallic nanotube devices. A detailed model is developed to fit the observed I-V characteristics, which enables us to verify the band gap from these measurements as well as the dimensions of the insulating tunneling barrier region.

The influence of substrate in determining the band gap of metallic carbon nanotubes.

We report a detailed comparison of ultraclean suspended and on-substrate carbon nanotubes (CNTs) in order to quantify the effect of the substrate interaction on the effective band gap of metallic nanotubes. Here, individual CNTs are grown across two sets of electrodes, resulting in one segment of the nanotube that is suspended across a trench and the other segment supported on the substrate. The suspended segment shows a significant change in the conductance (ΔG/G = 0.84) with applied gate voltage, which is attributed to a small band gap. The on-substrate segment, however, only shows a change in the measured conductance of ΔG/G = 0.11. A Landauer model is used to fit the low bias conductance of these devices. From these fits, the band gaps in the suspended region range from 75 to 100 meV but are only 5-14.3 meV when the nanotube is in contact with the substrate. The decreased band gap is attributed to localized doping caused by trapped charges in the substrate that result in inhomogeneous broadening of the Fermi energy, which in turn limits the ability to modulate the conductance.