ABSTRACT
We present a potential solution to the problem of extraction of photogenerated holes from CdS nanocrystals and nanowires. The nanosheet form of C3N5 is a low-band-gap (Eg = 2.03 eV), azo-linked graphenic carbon nitride framework formed by the polymerization of melem hydrazine (MHP). C3N5 nanosheets were either wrapped around CdS nanorods (NRs) following the synthesis of pristine chalcogenide or intercalated among them by an in situ synthesis protocol to form two kinds of heterostructures, CdS-MHP and CdS-MHPINS, respectively. CdS-MHP improved the photocatalytic degradation rate of 4-nitrophenol by nearly an order of magnitude in comparison to bare CdS NRs. CdS-MHP also enhanced the sunlight-driven photocatalytic activity of bare CdS NWs for the decolorization of rhodamine B (RhB) by a remarkable 300% through the improved extraction and utilization of photogenerated holes due to surface passivation. More interestingly, CdS-MHP provided reaction pathway control over RhB degradation. In the absence of scavengers, CdS-MHP degraded RhB through the N-deethylation pathway. When either hole scavenger or electron scavenger was added to the RhB solution, the photocatalytic activity of CdS-MHP remained mostly unchanged, while the degradation mechanism shifted to the chromophore cleavage (cycloreversion) pathway. We investigated the optoelectronic properties of CdS-C3N5 heterojunctions using density functional theory (DFT) simulations, finite difference time domain (FDTD) simulations, time-resolved terahertz spectroscopy (TRTS), and photoconductivity measurements. TRTS indicated high carrier mobilities >450 cm2 V-1 s-1 and carrier relaxation times >60 ps for CdS-MHP, while CdS-MHPINS exhibited much lower mobilities <150 cm2 V-1 s-1 and short carrier relaxation times <20 ps. Hysteresis in the photoconductive J-V characteristics of CdS NWs disappeared in CdS-MHP, confirming surface passivation. Dispersion-corrected DFT simulations indicated a delocalized HOMO and a LUMO localized on C3N5 in CdS-MHP. C3N5, with its extended π-conjugation and low band gap, can function as a shuttle to extract carriers and excitons in nanostructured heterojunctions, and enhance performance in optoelectronic devices. Our results demonstrate how carrier dynamics in core-shell heterostructures can be manipulated to achieve control over the reaction mechanism in photocatalysis.
ABSTRACT
Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm2 V-1 s-1 along the double-helix axis and a hole mobility of 238 cm2 V-1 s-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 1018 cm-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.
ABSTRACT
High electrical conductivity and strong absorption of electromagnetic radiation in the terahertz (THz) frequency range by metallic 2D MXene Ti3C2Ty make it a promising material for electromagnetic interference shielding, THz detectors, and transparent conducting electrodes. Here, we demonstrate that ultrafast optical pulses with wavelengths straddling the visible range (400 and 800 nm) induce transient broad-band THz transparency in the MXene that persists for nanoseconds. We demonstrate that optically induced transient THz transparency is independent of temperature from 95 to 290 K. This discovery opens new possibilities for development of switchable electromagnetic interference shielding materials and devices that can be rendered partially transparent on demand for transmitting THz signals, or for designing new THz devices such as sensitive optically gated detectors.
ABSTRACT
The gain properties of an oscillator strongly affect its behavior. When the gain is homogeneous, different modes compete for gain resources in a 'winner takes all' manner, whereas with inhomogeneous gain, modes can coexist if they utilize different gain resources. We demonstrate precise control over the mode competition in a mode locked Ti:sapphire oscillator by manipulation and spectral shaping of the gain properties, thus steering the competition towards a desired, otherwise inaccessible, oscillation. Specifically, by adding a small amount of spectrally shaped inhomogeneous gain to the standard homogeneous gain oscillator, we selectively enhance a desired two-color oscillation, which is inherently unstable to mode competition and could not exist in a purely homogeneous gain oscillator. By tuning the parameters of the additional inhomogeneous gain we flexibly control the center wavelengths, relative intensities and widths of the two colors.
