Non-invasive on-skin sensors for brain machine interfaces with epitaxial graphene.

Objective. Brain-machine interfaces are key components for the development of hands-free, brain-controlled devices. Electroencephalogram (EEG) electrodes are particularly attractive for harvesting the neural signals in a non-invasive fashion.Approach.Here, we explore the use of epitaxial graphene (EG) grown on silicon carbide on silicon for detecting the EEG signals with high sensitivity.Main results and significance.This dry and non-invasive approach exhibits a markedly improved skin contact impedance when benchmarked to commercial dry electrodes, as well as superior robustness, allowing prolonged and repeated use also in a highly saline environment. In addition, we report the newly observed phenomenon of surface conditioning of the EG electrodes. The prolonged contact of the EG with the skin electrolytes functionalize the grain boundaries of the graphene, leading to the formation of a thin surface film of water through physisorption and consequently reducing its contact impedance more than three-fold. This effect is primed in highly saline environments, and could be also further tailored as pre-conditioning to enhance the performance and reliability of the EG sensors.

MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors.

The potential of transition metal dichalcogenides such as MoS2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transition metal dichalcogenides can address this gap. Here, we explore the use of a layered electrode structure for solid-state supercapacitors, made of MoS2 and epitaxial graphene (EG) on cubic silicon carbide for on-silicon energy storage. We show that the energy storage of the solid-state supercapacitors can be significantly increased by creating layered MoS2/graphene electrodes, yielding a substantial improvement as compared to electrodes using either EG or MoS2 alone. We conclude that the conductivity of EG and the growth morphology of MoS2 on graphene play an enabling role in the successful use of transition metal dichalcogenides for on-chip energy storage.

Electron effective attenuation length in epitaxial graphene on SiC.

The inelastic mean free path (IMFP) for carbon-based materials is notoriously challenging to model, and moving from bulk materials to 2D materials may exacerbate this problem, making the accurate measurements of IMFP in 2D carbon materials critical. The overlayer-film method is a common experimental method to estimate IMFP by measuring electron effective attenuation length (EAL). This estimation relies on an assumption that elastic scattering effects are negligible. We report here an experimental measurement of electron EAL in epitaxial graphene on SiC using photoelectron spectroscopy over an electron kinetic energy range of 50-1150 eV. We find a significant effect of the interface between the 2D carbon material and the substrate, indicating that the attenuation length in the so-called 'buffer layer' is smaller than for free-standing graphene. Our results also suggest that the existing models for estimating IMFPs may not adequately capture the physics of electron interactions in 2D materials.

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells.

Molybdenum (Mo) is the most commonly used material as back contact in thin-film solar cells. Adhesion of Mo film to soda-lime glass (SLG) substrate is crucial to the performance of solar cells. In this study, an optimized bilayer structure made of a thin layer of Mo on an ultra-thin chromium (Cr) adhesion layer is used as the back contact for a copper zinc tin sulfide (CZTS) thin-film solar cell on a SLG substrate. DC magnetron sputtering is used for deposition of Mo and Cr films. The conductivity of Mo/Cr bilayer films, their microstructure and surface morphology are studied at different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease the back contact thickness to 600 nm. That is two thirds to half of the thickness that is currently being used for bilayer and single layer back contact for thin-film solar cells. We demonstrate the excellent properties of Mo/Cr bilayer as back contact of a CZTS solar cell.

Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111).

Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene's flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.

Supercapacitor Electrodes with Remarkable Specific Capacitance Converted from Hybrid Graphene Oxide/NaCl/Urea Films.

A novel approach to improve the specific capacitance of reduced graphene oxide (rGO) films is reported. We combine the aqueous dispersion of liquid-crystalline GO incorporating salt and urea with a blade-coating technique to make hybrid films. After drying, stacked GO sheets mediated by solidified NaCl and urea are hydrothermally reduced, resulting in a nanoporous film consisting of rumpled N-doped rGO sheets. As a supercapacitor electrode, the film exhibits a high gravimetric specific capacitance of 425 F g-1 and a record volumetric specific capacitance of 693 F cm-3 at 1 A g-1 in 1 M H2SO4 aqueous electrolyte when integrated into a symmetric cell. When using Li2SO4 aqueous electrolyte, which can extend the potential window to 1.6 V, the device exhibits high energy densities up to 35 Wh kg-1, and high power densities up to 104 W kg-1. This novel strategy to intercalate solidified chemicals into stacked GO sheets to functionalize them and prevent them from restacking provides a promising route toward supercapacitors with high specific capacitance and energy density.

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage.

Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga+ beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.

Role of Graphene Oxide Liquid Crystals in Hydrothermal Reduction and Supercapacitor Performance.

The formation of liquid crystal (LC) phases in graphene oxide (GO) aqueous solution is utilized to develop high-performance supercapacitors. To investigate the effect of LC formation on the properties of subsequently reduced GO (rGO), we compare films prepared through blade-coating of viscous LC-GO solution and ultrasonic spray-coating of diluted GO aqueous dispersion. After hydrothermal reduction under identical conditions, the films show different morphology, oxygen content, and specific capacitance. Trapped water in the LC GO film plays a role in preventing restacking of sheets and facilitating the removal of oxygenated groups during the reduction process. In device architectures with either liquid or polymer electrolyte, the specific capacitance of the blade-coated film is twice as high as that of the spray-coated one. For a blade-coated film with mass loading of 0.115 mg/cm(2), the specific capacitance reaches 286 F/g in aqueous electrolyte and 263 F/g in gelled electrolyte, respectively. This study suggests a route to pilot-scale production of high-performance graphene supercapacitors through blade-coated LC-GO films.