ABSTRACT
Significant challenges exist in assembling and interconnecting the building blocks of a nanoscale device and being able to electronically address or measure responses at the molecular level. Here we demonstrate the usefulness of engineered proteins as scaffolds for bottom-up self-assembly for building nanoscale devices out of multiple components. Using genetically engineered cowpea mosaic virus, modified to express cysteine residues on the capsid exterior, gold nanoparticles were attached to the viral scaffold in a specific predetermined pattern to produce specific interparticle distances. The nanoparticles were then interconnected using thiol-terminated conjugated organic molecules, resulting in a three-dimensional network. Network properties were engineered by using molecular components with different I-V characteristics. Networks consisting of molecular wires alone were compared with networks containing voltage controlled molecular switches with two stable conductance states. Using such bistable molecules enabled the formation of switchable molecular networks that could be used in nanoscale memory circuits.
Subject(s)
Bionics/methods , Comovirus/chemistry , Metal Nanoparticles/chemistry , Metal Nanoparticles/virology , Binding Sites , Biocompatible Materials/chemistry , Crystallization , Electric Conductivity , Gold , Ion Exchange , Macromolecular Substances/chemistry , Materials Testing , Microscopy, Scanning Tunneling , Molecular Conformation , Nanotechnology/methods , Organisms, Genetically Modified , Protein EngineeringABSTRACT
Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the potential to present significant area advantages (4 to 6F(2)) compared to CMOS-based systems. The scalability of these conductivity-switched RAM arrays is examined by establishing criteria for correct functionality based on the readout margin. Using a combined circuit theoretical modelling and simulation approach, the impact of both the device and interconnect architecture on the scalability of a conductivity-state memory system is quantified. This establishes criteria showing the conditions and on/off ratios for the large-scale integration of molecular devices, guiding molecular device design. With 10% readout margin on the resistive load, a memory device needs to have an on/off ratio of at least 7 to be integrated into a 64 x 64 array, while an on/off ratio of 43 is necessary to scale the memory to 512 x 512.
