ABSTRACT
Transition metal oxide semiconductors have great potential for use in H2 sensors, but in recent years, the strange phenomena about gas-sensitive performance associated with their special properties have been more widely discussed in research. In some cases, the resistance of transition metal oxide gas sensors will emerge with some changes contrary to their intrinsic semiconductor characteristics, especially in gas sensor research of WO3. Based on the hydrothermal synthesis of WO3, our work focuses on the abnormal change of tungsten oxide resistance to different gases at low temperature (80-200 °C) and high temperature (above 200 °C). Through in situ FT-IR and in situ XPS, combined with density functional theory calculations, a new reasonable explanation of WO3 is proposed for the abnormal resistance change caused by temperature and the strange response due to gas concentration. The occurrence of these findings can be attributed to the synergistic effect resulting from the presence of two contributing factors. One of them is attributed to the alteration in the surface valence state of WO3 induced by gas, resulting in the reduction of W6+. The other one is due to the reaction between gas and adsorbed oxygen on the surface of WO3. This work presents a novel and rational concept for addressing the reaction mechanism between gas and transition metal oxide semiconductors, thereby paving the way for the development of highly efficient gas sensors based on transition metal oxide semiconductors.
ABSTRACT
Oxygen vacancies (VO) in metal oxide semiconductors play an important role in improving gas-sensing performance of chemiresistive gas sensors. Nonetheless, there is still a lack of clear understanding of the inherent mechanism of the influence of oxygen vacancies on gas sensing due to generally focusing on the concentration of VO. Herein, oxygen vacancies were rationally modulated in WO3 nanoflower structures via an annealing process, resulting in a transformation of VO from neutral (VO0) to a doubly ionized (VO2+) state. Density functional theory (DFT) calculations indicate that VO2+ is significantly more efficient than VO0 for NO2 detection in competition with atmospheric O2. Benefiting from a high concentration of VO2+, the WO3-450 (WO3 annealed at 450 °C) sensor exhibits excellent sensing performance with an ultrahigh sensitivity (3674.1 to 5 ppm NO2), superior selectivity, and long-term stability (one month). Furthermore, the sensor with the wide range of concentration detection not only can detect NO2 gas with parts per million (ppm) but also can detect NO2 with parts per billion (ppb) level concentration, with a high sensibility reaching 2.8 to 25 ppb NO2 and over 100 to 100 ppb NO2. This study elucidates the oxygen vacancy mediated sensing mechanism toward NO2 and provides an effective strategy for the rational design of gas sensors with high sensing performance.
ABSTRACT
Hydrogen can be regarded as an ideal type of secondary energy considering its potential for achieving renewable and sustainable development due to water being its sole combustion product and its possible production by solar energy-based water electrolysis. Monitoring the presence and concentration of hydrogen during production, transportation, and application requires a hydrogen gas sensor with high response, high selectivity, and fast response and recovery times. In an attempt to meet these requirements, NiO and PdO are used in the co-doping of In2O3 nanotubes by subsequent electrospinning and impregnation under UV irradiation. The fabricated hydrogen gas sensor demonstrates an ultrahigh response of 487.52, a fast response time of 1 s and high selectivity at an operating temperature of 160 °C, which characteristics are superior to reported monometal-doped hydrogen sensors. The remarkable gas sensing performance could be attributed to the synergistic effect of the resistance modulation, the chemical sensitization of PdO, and the catalytic effect of NiO. This study demonstrates that co-doping of PdO and NiO on In2O3 nanotubes is an effective way to improve hydrogen sensing characteristics more effectively than doping with PdO or NiO alone, and provides a potential application for the fast and accurate detection of hydrogen.
ABSTRACT
The preparation of fast, highly responsive and reliable gas sensing devices for the detection of acetone gas is considered to be a key challenge for the development of accurate disease diagnosis systems through exhaled respiratory gases. In the paper, yolk shell Sb2O3/WO3 is synthesized and its gas sensing performance was studied by static test system. Special, the maximum response value of 1:1 Sb2O3/WO3 yolk-shell (WO3-1 YSL) sensor to 100 ppm acetone can reach as high as 50.0 at 200 â. And it also exhibits excellent response/recover time (4 s/5 s), low detection limit (2 ppm) and superior selectivity towards acetone. More importantly, in mixed selective gas test, the sensor shows high selectivity towards acetone. And the mechanism is analyzed by ex-situ XPS. The excellent gas-sensing performance can be attributed to unique yolk-shell structure, which facilitates the rapid transport of charge carriers from the surface to the bulk and provides more active sites for gas adsorption and desorption; the heterojunction between of Sb2O3 and WO3, which promotes oxygen pre-adsorption on the surface and increasing the interfacial potential; the increased oxygen vacancies which allowing more chemisorbed oxygen to form.