ABSTRACT
In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was proposed. After thermal treatment of molecular-beam-epitaxy-grown GeSn, self-assembled Sn nanodots (NDs) were formed on surface and the spontaneous emission from GeSn direct band was enhanced by â¼5-fold. Employing the self-assembled Sn NDs as template, vertical GeSn NWs with a diameter of 25 ± 6 nm and a density of 2.8 × 109 cm-2 were obtained by Cl-based ICP dry etching technique. A prototype GeSn NW photodetector (PD) with rapid switching ability was demonstrated and the optoelectronic performance of Ge NW PD was systematically studied. The GeSn NW PD exhibited an ultralow dark current density of â¼33 nA/cm2 with a responsivity of 0.245 A/W and a high specific detectivity of 2.40 × 1012 cm Hz1/2 W-1 at 1550 nm under -1 V at 77 K. The results prove that this method is prospective for low-cost and scalable fabrication of GeSn NWs, which are promising for near infrared or short wavelength infrared nanophotonic devices.
ABSTRACT
A beam-shaping scheme for a laser diode stack to obtain a flattop output intensity profile is proposed. The shaping element consists of an asymmetrical glass prism. The large divergence-angle compression in the direction perpendicular to the junction plane and the small divergence-angle expansion in the parallel direction are performed simultaneously by a single shaping element. The transformation characteristics are presented, and the optimization performance is investigated based on the ray-tracing method. Analysis shows that a flattop intensity profile can be obtained. This beam-shaping system can be fabricated easily and has a large alignment tolerance.
ABSTRACT
Based on the off-axis theory, a model for describing the far field with the bipeak structure of a high-power laser diode is proposed. The computed results agree well with the measured far-field data of practical devices. A minimum overall error criterion for fitting the theoretical model with the measured data is also given. The results show that the overall error of this model is less than 5% for popular laser diodes. This model has a simple mathematical structure and can be easily used to design the beam-shaping system and to analyze the propagation properties when the laser beam passes through an optic system.
ABSTRACT
A parabolalike fiber end to couple the light from a high-power laser diode into a multimode fiber is presented. The formula for the coupling efficiency of such a system is given, and numerical evaluation shows that the theoretical coupling efficiency can be as high as 92% without an antireflection coating on the fiber's end face. This beam-shaping system can be fabricated easily and has a large alignment tolerance.
