ABSTRACT
Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) is utilized to provide insight into surface chemical effects in model photoresist films. First, NEXAFS was used to examine the resist/air interface including surface segregation of a photoacid generator (PAG) and the extent of surface deprotection in the film. The concentration of PAG at the resist-air interface was higher than the bulk concentration, which led to a faster deprotection rate at that interface. Second, a NEXAFS depth profiling technique was utilized to probe for compositional gradients in model resist line edge regions. In the model line edge region, the surface composition profile for the developed line edge was dependent on the post exposure bake time.
ABSTRACT
Moisture absorption in model photoresist films of poly(4-hydroxystryene) (PHOSt) and poly(tert-butoxycarboxystyrene) (PBOCSt) supported on silicon wafers was measured by X-ray and neutron reflectivity. The overall thickness change in the films upon moisture exposure was found to be dependent upon the initial film thickness. As the film becomes thinner, the swelling is enhanced. The enhanced swelling in the thin films is due to the attractive nature of the hydrophilic substrate, leading to an accumulation of water at the silicon/polymer interface and subsequently a gradient in concentration from the enhancement at the interface to the bulk concentration. As films become thinner, this interfacial excess dominates the swelling response of the film. This accumulation was confirmed experimentally using neutron reflectivity. The water rich layer extends 25 +/- 10 A into the film with a maximum water concentration of approximately 30 vol %. The excess layer was found to be polymer independent despite the order of magnitude difference in the water solubility in the bulk of the film. To test if the source of the thickness dependent behavior was the enhanced swelling at the interface, a simple, zero adjustable parameter model consisting of a fixed water rich layer at the interface and bulk swelling through the remainder of the film was developed and found to reasonably correspond to the measured thickness dependent swelling.
ABSTRACT
The continuing drive by the semiconductor industry to fabricate smaller structures using photolithography will soon require dimensional control at length scales comparable to the size of the polymeric molecules in the materials used to pattern them. The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial resolution. However, nanometer-level control of this critical process is limited by the lack of direct measurements of the reaction front. We demonstrate the use of x-ray and neutron reflectometry as a general method to measure the spatial evolution of the reaction-diffusion process with nanometer resolution. Measuring compositional profiles, provided by deuterium-labeled reactant groups for neutron scattering contrast, we show that the reaction front within the material is broad rather than sharply defined and the compositional profile is altered during development. Measuring the density profile, we directly correlate the developed film structure with that of the reaction front.
