Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing.

The integration of compact high-bandwidth III-V active devices in a scalable manner is highly significant for Silicon-on-insulator (SOI) photonic integrated circuits. To address this, we demonstrate the integration of pre-fabricated 21 × 57 µm2 InGaAs photodetector (PD) coupons with a thickness of 675 nm to a 500 nm SOI platform using a direct bonding micro-transfer printing process. The common devices are coupled to the Si waveguides via butt, grating and evanescent coupling schemes with responsivities of 0.13, 0.3 and 0.6 A/W respectively, in line with simulations. The thin device facilitates simplified high-speed connections without the need for an interlayer dielectric. A back-to-back data communication rate of 50 Gb/s is achieved with on-off keying and with post processing of four-level pulse-amplitude modulation (PAM4) 100 Gb/s is realized. Potentially, around 1 million devices per 75 mm InP wafer can be attained. The integration of compact PDs exhibited in this work can be extended to modulators and lasers in the future.

Integrated silicon photonic MEMS.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces. However, silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption, which are substantial impediments for very large-scale integration in silicon photonics. Microelectromechanical systems (MEMS) technology can enhance silicon photonics with building blocks that are compact, low-loss, broadband, fast and require very low power consumption. Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, with wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fibre-array attachment for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements, including power couplers, phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications, neuromorphic computing, sensing, programmable photonics, and quantum computing.

Vacuum-sealed silicon photonic MEMS tunable ring resonator with an independent control over coupling and phase.

Ring resonators are a vital element for filters, optical delay lines, or sensors in silicon photonics. However, reconfigurable ring resonators with low-power consumption are not available in foundries today. We demonstrate an add-drop ring resonator with the independent tuning of round-trip phase and coupling using low-power microelectromechanical (MEMS) actuation. At a wavelength of 1540 nm and for a maximum voltage of 40 V, the phase shifters provide a resonance wavelength tuning of 0.15 nm, while the tunable couplers can tune the optical resonance extinction ratio at the through port from 0 to 30 dB. The optical resonance displays a passive quality factor of 29 000, which can be increased to almost 50 000 with actuation. The MEMS rings are individually vacuum-sealed on wafer scale, enabling reliable and long-term protection from the environment. We cycled the mechanical actuators for more than 4 × 109 cycles at 100 kHz, and did not observe degradation in their response curves. On mechanical resonance, we demonstrate a modulation increase of up to 15 dB, with a voltage bias of 4 V and a peak drive amplitude as low as 20 mV.

Point-to-point overlay of a 100Gb/s DP-QPSK channel in LR-PONs for urban and rural areas.

The continuing growth in information demand from fixed and mobile end-users, coupled with the need to deliver this content in an economically viable manner, is driving new innovations in access networks. In particular, it is becoming increasingly important to find new ways to enable the coexistence of heterogeneous services types which may require different signal modulation formats over the same fiber infrastructure. For example, the same physical layer can potentially be used to deliver shared 10Gb/s services to residential customers, dedicated point-to-point (P2P) 100Gb/s services to business customers, and wireless fronthaul, in a highly cost-effective manner. In this converged scenario, the performance of phase modulated signals can be heavily affected by nonlinear crosstalk from co-propagating on-off-keying (OOK) channels. In this paper, the overlay of a 100G P2P dual-polarization quadrature phase-shift keying (DP-QPSK) channel in a long-reach passive optical network (LR-PON) in the presence of co-propagating 10Gb/s OOK neighboring channels is studied for two different PON topologies. The first LR-PON topology is particularly suited for densely populated areas while the second is aimed at rural, sparsely populated areas. The experimental results indicate that with an emulated load of 40 channels the urban architecture can support up to 100km span and 512 users, while the rural architecture can support up to 120km span and 1024 users. Finally, a system model is developed to predict the system performance and system margins for configurations different from the experimental setups and to carry out design optimization that could in principle lead to even more efficient and robust schemes.

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links.

We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.

Demonstration of error-free 25Gb/s duobinary transmission using a colourless reflective integrated modulator.

To realise novel, low-cost, photonic technologies that can support 100Gb/s Ethernet in next-generation dense wavelength-division-multiplexed metro transport networks, we are developing arrayed photonic integrated circuits that leverage colourless reflective modulators. Here, we demonstrate a single-channel, hybrid reflective electroabsorption modulator-based device, showing error-free 25.3Gb/s duobinary transmission with bit-error rates less than 1 × 10(-12) over 35km of standard single-mode fibre. We further confirm the modulator's colourless operation over the ITU C-band, with a 1.2dB variation in required optical signal-to-noise ratio over this wavelength range.

An upstream reach-extender for 10Gb/s PON applications based on an optimized semiconductor amplifier cascade.

We present a reach-extender for the upstream transmission path of 10Gb/s passive optical networks based on an optimised cascade of two semiconductor optical amplifiers (SOAs). Through careful optimisation of the bias current of the second stage SOA, over 19dB input dynamic range and up to 12dB compression of the output dynamic range were achieved without any dynamic control. A reach of 70km and split up to 32 were demonstrated experimentally using an ac-coupled, continuous-mode receiver with a reduced 56ns ac-coupling constant.

A 10G linear burst-mode receiver supporting electronic dispersion compensation for extended-reach optical links.

We present a novel 10G linear burst-mode receiver (LBMRx). Equipped with a PIN photodiode, a high sensitivity of -22.7 dBm (bit-error rate: 1.1x10(-3)) was achieved when handling bursts with a dynamic range of 22.7 dB (each -22.7 dBm burst was preceded by a 0 dBm burst). The LBMRx requires a 150 ns preamble for fast gain adjustment at the start of each burst and can handle bursts separated by a guard time as short as 25.6 ns. With electronic dispersion compensation, 3400 ps/nm (200 km) chromatic dispersion can be tolerated at 2dB penalty in ASE-impaired links using C-band electro-absorption modulators.

Optimisation of SOA-REAMs for hybrid DWDM-TDMA PON applications.

We demonstrate how loss-optimised, gain-saturated SOA-REAM based reflective modulators can reduce the burst to burst power variations due to differential access loss in the upstream path in carrier distributed passive optical networks by 18 dB compared to fixed linear gain modulators. We also show that the loss optimised device has a high tolerance to input power variations and can operate in deep saturation with minimal patterning penalties. Finally, we demonstrate that an optimised device can operate across the C-Band and also over a transmission distance of 80 km.