Room-temperature graphitization in a solid-phase reaction.

Graphitized carbon including graphene has recently become one of the most investigated advanced materials for future device applications, but a prerequisite for broadening its range of applications is to lower its growth temperature. Here we report a great decrease in graphitization temperature using the well-known catalyst Ni. Amorphous carbon films with Ni nanoparticles (NPs) were deposited, using a simple one-step magnetron sputtering method, onto microgrids and a SiO2/Si substrate for transmission electron microscopy (TEM) and Raman spectroscopy analyses, respectively. The amorphous carbon surroundings and locations between the Ni NPs started to become graphitized during the film deposition even at room temperature (RT) and 50 °C. The graphitization was confirmed by both high-resolution TEM (HR-TEM) and Raman 2D peak analyses. The increase in the relative amount of Ni in the amorphous carbon film led to the partial oxidation of the larger Ni NPs, resulting in less graphitization even at an elevated deposition temperature. Based on the detailed HR-TEM analyses, a decreased oxidation of NPs and enhanced solubility of carbon into Ni NPs were believed to be key for achieving low-temperature graphitization.

The Mo catalyzed graphitization of amorphous carbon: an in situ TEM study.

For the fabrication of graphene-based nano-scale interconnects, precise control over their position and proper nanoscale soldering are essential. In this work, we report the Joule heat-induced conversion of amorphous carbon to graphene in an in situ TEM setup, using Mo as a catalyst. The catalytic role of Mo during graphene formation has been less explored compared to other metals like Cu or Ni. Compared to metals like Cu, Mo is less subject to electromigration and brittleness, making it suitable for high-temperature electronics. We found that during the electromigration of Mo, amorphous carbon nanofibers (CNFs) can be converted to highly crystalline few-layered graphene. It was also found that during the graphene formation process, agglomerated Mo particles can be effectively channeled to the end of graphene by voltage-driven electromigration. An agglomerated Mo particle between the probe and graphene acted as a soldering agent, providing the prospect of the further exploration of Mo as a nanoscale soldering material. This work explores the double role of Mo: as a catalyst for graphene synthesis and as a soldering material.

Transfer free graphene growth on SiO2 substrate at 250 °C.

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 µm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.