Colloidal PbS quantum dot solar cells with high fill factor.

We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FF) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (VOC) of 0.47 V can be achieved. The power conversion efficiency reaches 1.3% under 1 sun AM1.5 test conditions and 2.4% under monochromatic infrared (lambda=1310 nm) illumination. A consistent mechanism for device operation is developed through a circuit model and experimental measurements, shedding light on new approaches for optimization of solar cell performance by modifying the interface between the QDs and the neighboring charge transport layers.

Heterojunction photovoltaics using printed colloidal quantum dots as a photosensitive layer.

We demonstrate a bilayer photovoltaic device consisting of a heterojunction between colloidal cadmium selenide (CdSe) quantum dots (QDs) and a wide band gap organic hole-transporting thin film of N,N'-diphenyl-N,N'-bis(3-methylphenyl)[1,1'-biphenyl]-4,4'-diamine (TPD) molecules. The active light-absorbing film of QDs is nondestructively printed onto TPD using microcontact stamping. Indium-tin-oxide (ITO) provides the top contact. The resulting device structure can accommodate different size QDs, produces an exceptionally large open circuit voltage (0.8 V) for an architecture with symmetric electrodes, and yields an internal quantum efficiency of 10% at the first QD absorption peak.