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1.
Beilstein J Nanotechnol ; 9: 963-974, 2018.
Article in English | MEDLINE | ID: mdl-29600157

ABSTRACT

The influence of graphene and retinoic acid (RA) - a π-conjugated organic semiconductor - interface on their hybrid system is investigated. The physical properties of the interface are assessed via scanning probe microscopy, optical spectroscopy (photoluminescence and Raman) and ab initio calculations. The graphene/RA interaction induces the formation of a well-organized π-conjugated self-assembled monolayer (SAM) at the interface. Such structural organization leads to the high optical emission efficiency of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates surface potential changes on the hybrid system. In summary, interface-induced organized structures atop 2D materials may have an important impact on both design and operation of π-conjugated nanomaterial-based hybrid systems.

2.
Nanoscale ; 7(39): 16175-81, 2015 Oct 21.
Article in English | MEDLINE | ID: mdl-26381825

ABSTRACT

The charge transfer between neighboring single-walled carbon nanotubes (SWNTs) on a silicon oxide surface was investigated as a function of both the SWNT nature (metallic or semiconducting) and the anode/cathode distance using scanning probe techniques. Two main mechanisms were observed: a direct electron tunneling described by the typical Fowler-Nordheim model, and indirect electron transfer (hopping) mediated by functional groups on the supporting surface. Both mechanisms depend on the SWNT nature and on the anode/cathode separation: direct electron tunneling dominates the charge transfer process for metallic SWNTs, especially for large distances, while both mechanisms compete with each other for semiconducting SWNTs, prevailing one over the other depending on the anode/cathode separation. These mechanisms may significantly influence the design and operation of SWNT-based electronic devices.

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