ABSTRACT
This paper introduces an innovative and cost-effective approach for developing a millimeter-wave (mmWave) frequency-reconfigurable dielectric resonator antenna (DRA), which has not been reported before. The antenna integrates two rectangular DRA elements, where each DRA is centrally fed via a slot. A strategically positioned PIN diode is employed to exert control over performance by modulating the ON-OFF states of the diode, thereby simplifying the design process and reducing losses. In the OFF state, the first DRA, RDRA-I, exclusively supports the TE311 resonance mode at 24.3 GHz, offering a 2.66% impedance bandwidth and achieving a maximum broadside gain of 9.2 dBi. Conversely, in the ON state, RDRA-I and RDRA-II concurrently operate in the TE513 resonance mode at 29.3 GHz, providing a 2.7% impedance bandwidth and yielding a high gain of up to 11.8 dBi. Experimental results substantiate that the proposed antenna presents an attractive solution for applications necessitating frequency-reconfigurable and high-performance mmWave antennas in 5G and Beyond 5G (B5G) communication systems.
ABSTRACT
This paper presents a comprehensive assessment of the performance of on-chip circularly polarized (CP) circular loop antennas that have been designed and fabricated to operate in the Q/V frequency band. The proposed antenna design incorporates two concentric loops, with the outer loop as the active element and the inner loop enhancing the CP bandwidth. The study utilizes gallium arsenide (GaAs) and silicon carbide (4H-SiC) semiconductor wafer substrates. The measured results highlight the successful achievement of impedance matching at 40 GHz and 44 GHz for the 4H-SiC and GaAs substrates, respectively. Furthermore, both cases yield an axial ratio (AR) of less than 3 dB, with variations in bandwidths and frequency bands contingent upon the dielectric constant of the respective substrate material. Moreover, the outcomes confirm that utilizing 4H-SiC substrates results in a significantly higher radiation efficiency of 95%, owing to lower substrate losses. In pursuit of these findings, a 4-element circularly polarized loop array antenna has been fabricated for operation at 40 GHz, employing a 4H-SiC wafer as a low-loss substrate. The results underscore the antenna's remarkable performance, exemplified by a broadside gain of approximately 9.7 dBic and a total efficiency of circa 92%. A close agreement has been achieved between simulated and measured results.
ABSTRACT
A singly fed reconfigurable circular loop antenna is proposed for millimeter-wave (mmWave) communication systems. This antenna's distinctive feature lies in its capacity to adjust both polarization and bandwidth characteristics, a capability made possible by the strategic integration of two PIN diodes. These diodes are engineered to function in various modes, allowing for three distinct polarization states and accommodating two distinct bandwidths. A meticulous alignment of these PIN diodes enables the utilization of a single DC bias network as a highly effective RF choke, which simplifies the design and reduces the associated losses. Additionally, a planar biasing network that consists of coplanar strip-lines (CPS) has been employed eliminating the need for lumped elements. The simple and totally planar configuration offers a choice of right-hand circularly polarized (RHCP) radiation or left-hand circularly polarized (LHCP) radiation at 28 GHz. This is accompanied by impedance matching and axial ratio (AR) bandwidths of 12.9% and 8%, respectively, over the same frequency range with a gain of 7.5 dBic. Moreover, when the PIN diodes are unbiased, the antenna offers linear polarization (LP) over two narrow bandwidths at 27 GHz and 29 GHz featuring a maximum gain of 7.2 dBic. Therefore, the proposed configuration offers three operating modes: wide-band RHCP, wide-band-LHCP, and LP over dual narrow bands. Significantly, simulated results closely align with the measured outcomes, affirming the robustness and accuracy of this design.
