Comparison of Diagnostic Yield of a FISH Panel Against Conventional Cytogenetic Studies for Hematological Malignancies: A South Indian Referral Laboratory Analysis Of 201 Cases

Objectives: Genetic markers are crucial fort diagnostic and prognostic investigation of hematological malignancies (HM). The conventional cytogenetic study (CCS) has been the gold standard for more than five decades. However, FISH (Fluorescence in Situ Hybridization) testing has become a popular modality owing to its targeted approach and the ability to detect abnormalities in non-mitotic cells. We here aimed to compare the diagnostic yields of a FISH panel against CCS in HMs. Methods: Samples of bone marrow and peripheral blood for a total of 201 HMs were tested for specific gene rearrangements using multi-target FISH and the results were compared with those from CCS. Results: Exhibited a greater diagnostic yield with a positive result in 39.8% of the cases, as compared to 17.9% of cases detected by CCS. Cases of chronic lymphocytic leukaemia (CLL) benefited the most by FISH testing, which identified chromosomal aberrations beyond the capacity of CCS. FISH was least beneficial in myelodysplastic syndrome (MDS) where the highest concordance with CCS was exhibited. Acute lymphocytic leukaemia (ALL) demonstrated greater benefit with CCS. In addition, we found the following abnormalities to be most prevalent in HMs by FISH panel testing: RUNX1 (21q22) amplification in ALL, deletion of D13S319/LAMP1 (13q14) in CLL, CKS1B (1q21) amplification in multiple myeloma and deletion of EGR1/RPS14 (5q31/5q32) in MDS, consistent with the literature. Conclusions: In conclusion, FISH was found to be advantageous in only a subset of HMs and cannot completely replace CCS. Utilization of the two modalities in conjunction or independently should depend on the indicated HM for an optimal approach to detecting chromosomal aberrations.

Evolution of magnetic properties and exchange interactions in Ru doped YbCrO3.

Magnetic properties of YbCr1-x Ru x O3 as a function of temperature and magnetic field have been investigated to explore the intriguing magnetic phenomena in rare-earth orthochromites. A quantitative analysis of x-ray photoelectron spectroscopy confirms the mixed valence state (Yb(3+) and Yb(2+)) of Yb ions for the highest doped sample. Field-cooled magnetization reveals a broad peak around 75 K and then becomes zero at about 20-24 K, due to the antiparallel coupling between Cr(3+) and Yb(3+) moments. An increase of the Ru(4+) ion concentration leads to a slight increase of compensation temperature T comp from 20 to 24 K, but the Néel temperature remains constant. A larger value of the magnetic moment of Yb ions gives rise to negative magnetization at low temperature. An external magnetic field significantly modifies the temperature dependent magnetization. Simulation of temperature dependent magnetization data, below T N, based on the three (two) magnetic sub-lattice model predicts stronger intra-sublattice exchange interaction than that of inter-sublattice. Thermal hysteresis and Arrot plots suggest first order magnetic phase transition. Random substitution of Ru(4+) ion reduces the magnetic relaxation time. Weak ferromagnetic component in canted antiferromagnetic system and negative internal magnetic field cause zero-field-cooled exchange bias effect. Large magnetocrystalline anisotropy associated with Ru creates high coercivity in the Ru doped sample. A maximum value of magnetocaloric effect is found around the antiferromagnetic ordering of Yb(3+) ions. Antiferromagnetic transition at about 120 K and temperature induced magnetization reversal lead to normal and inverse magnetocaloric effects in the same material.

Excitation dependent multicolor emission and photoconductivity of Mn, Cu doped In2S3 monodisperse quantum dots.

Indium sulphide (In2S3) quantum dots (QDs) of average size 6 ± 2 nm and hexagonal nanoplatelets of average size 37 ± 4 nm have been synthesized from indium myristate and indium diethyl dithiocarbamate precursors respectively. The absorbance and emission band was tuned with variation of nanocrytal size from very small in the strong confinement regime to very large in the weak confinement regime. The blue emission and its shifting with size has been explained with the donor-acceptor recombination process. The 3d element doping (Mn(2+) and Cu(2+)) is found to be effective for formation of new emission bands at higher wavelengths. The characteristic peaks of Mn(2+) and Cu(2+) and the modification of In(3+) peaks in the x-ray photoelectric spectrum (XPS) confirm the incorporation of Mn(2+) and Cu(2+) into the In2S3 matrix. The simulation of the electron paramagnetic resonance signal indicates the coexistence of isotropic and axial symmetry for In and S vacancies. Moreover, the majority of Mn(2+) ions and sulphur vacancies (VS ) reside on the surface of nanocrystals. The quantum confinement effect leads to an enhancement of band gap up to 3.65 eV in QDs. The formation of Mn 3d levels between conduction band edge and shallow donor states is evidenced from a systematic variation of emission spectra with the excitation wavelength. In2S3 QDs have been established as efficient sensitizers to Mn and Cu emission centers. Fast and slow components of photoluminescence (PL) decay dynamics in Mn and Cu doped QDs are interpreted in terms of surface and bulk recombination processes. Fast and stable photodetctors with high photocurrent gain are fabricated with Mn and Cu doped QDs and are found to be faster than pure In2S3. The fastest response time in Cu doped QDs is an indication of the most suitable system for photodetector devices.

Carrier concentration dependent optical and electrical properties of Ga doped ZnO hexagonal nanocrystals.

Colloidal trivalent gallium (Ga) doped zinc oxide (ZnO) hexagonal nanocrystals have been prepared to introduce more carrier concentration into the wide band gap of ZnO. The dopant (Ga) modifies the morphology and size of ZnO nanocrystals. Low content of Ga enhances the optical band gap of ZnO due to excess carrier concentration in the conduction band of ZnO. The interaction among free carriers arising from higher concentration of Ga gives rise to narrowing of the band gap. Surface plasmon resonance absorption appears in the infrared region due to excessive carrier concentration. A broad emission band consists of blue, yellow and green colors associated with different native defects of ZnO. Intrinsic defects and extrinsic dopant Ga control the defect related emission spectrum in the visible region. Replacement of Zn by Ga induces a room temperature metallic state in a degenerate semiconductor. Cationic disorder leads to metal-semiconductor transition at low temperature strongly dependent on the concentration of Ga. Pure semiconducting behavior up to about 80 K is observed for the highest amount of Ga. Temperature dependent metal-semiconductor transition has been interpreted by localization of charge carriers due to disorder arising from random Ga substitution.

Interfacial magnetism and exchange coupling in BiFeO3-CuO nanocomposite.

Ferromagnetic BiFeO3 nanocrystals of average size 9 nm were used to form a composite with antiferromagnetic CuO nanosheets, with the composition (x)BiFeO3/(100-x)CuO, x = 0, 20, 40, 50, 60, 80 and 100. The dispersion of BiFeO3 nanocrystals into the CuO matrix was confirmed by x-ray diffraction and transmission electron microscopy. The ferromagnetic ordering as observed in pure BiFeO3 occurs mainly due to the reduction in the particle size as compared to the wavelength (62 nm) of the spiral modulated spin structure of the bulk BiFeO3. Surface spin disorder of BiFeO3 nanocrystals gives rise to an exponential behavior of magnetization with temperature. Strong magnetic exchange coupling between the BiFeO3 nanocrystal and the CuO matrix induces an interfacial superparamagnetic phase with a blocking temperature of about 80 K. Zero field and field cooled magnetizations are analyzed by a ferromagnetic core and disordered spin shell model. The temperature dependence of the calculated saturation magnetization exhibits three magnetic contributions in three temperature regimes. The BiFeO3/CuO nanocomposites reveal an exchange bias effect below 170 K. The maximum exchange bias field HEB is 1841 Oe for x = 50 at 5 K under field cooling of 50 kOe. The exchange bias coupling results in an increase of coercivity of 1934 Oe at 5 K. Blocked spins within an interfacial region give rise to a remarkable exchange bias effect in the nanocomposite due to strong magnetic exchange coupling between the BiFeO3 nanocrystals and the CuO nanosheets.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.