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1.
Chemistry ; 29(53): e202301751, 2023 Sep 21.
Article in English | MEDLINE | ID: mdl-37409634

ABSTRACT

Silver-catalyzed reactions of N-sulfenylanilides afforded the corresponding p-sulfenylanilides in good to high yields with good para selectivity. The transformation has a high compatibility of functional groups, such as ester, bromo, and iodo groups. Mechanistic studies indicate that the rearrangement reaction proceeds through intermolecular transfer of the sulfenyl group.

2.
Org Lett ; 24(50): 9264-9268, 2022 Dec 23.
Article in English | MEDLINE | ID: mdl-36512340

ABSTRACT

Gold-catalyzed reactions between sulfenamides and terminal alkynes proceeded via cis-insertion of alkynes into the N-S bond in sulfenamides, affording the corresponding ß-sulfenylenamines in yields up to 90%. Mechanistic studies revealed that the reactions proceeded via nucleophilic attack of the sulfenamide nitrogen atom on the π-activated alkyne, followed by tosylate-assisted intermolecular transfer of the sulfenyl group.

3.
Materials (Basel) ; 13(13)2020 Jul 06.
Article in English | MEDLINE | ID: mdl-32640695

ABSTRACT

A series of quinoidal oligothiophenes terminated with carbonyl groups (nTDs, n = 2-4) are studied as p-type organic semiconductors for the active materials in organic field-effect transistors (OFETs) both by the theoretical and experimental approaches. The theoretical calculations clearly show their high-lying highest occupied molecular orbital (HOMO) energy levels (EHOMOs), small reorganization energies for hole transport (λholes), and large contribution of sulfur atoms to HOMOs, all of which are desirable for p-type organic semiconductors. Thus, we synthesized nTDs from the corresponding aromatic oligothiophene precursors and then evaluated their physicochemical properties and structural properties. These experimental evaluations of nTDs nicely proved the theoretical predictions, and the largest 4TDs in the series (4,4'''-dihexyl- and 3',4,4″,4'''-tetrahexyl-5H,5'''H-[2,2':5',2″:5″,2'''-quaterthiophene]-5,5'''-dione) can afford solution-processed OFETs showing unipolar p-type behaviors and hole mobility as high as 0.026 cm2 V-1 s-1.

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